Interface-Induced Magnetization and Exchange Bias in LSMO/BFO Multiferroic Heterostructures

2020 ◽  
Vol 2 (8) ◽  
pp. 2629-2637
Author(s):  
Champa Lal Prajapat ◽  
Harsh Bhatt ◽  
Yogesh Kumar ◽  
T. V. Chandrasekhar Rao ◽  
Prasant K. Mishra ◽  
...  
2019 ◽  
Vol 481 ◽  
pp. 227-233 ◽  
Author(s):  
W.C. Zheng ◽  
D.X. Zheng ◽  
Y.C. Wang ◽  
D. Li ◽  
C. Jin ◽  
...  

2015 ◽  
Vol 110 (2) ◽  
pp. 27005 ◽  
Author(s):  
Dongxing Zheng ◽  
Mingyu Sun ◽  
Dong Li ◽  
Peng Li ◽  
Chao Jin ◽  
...  

2015 ◽  
Vol 7 (27) ◽  
pp. 14758-14762 ◽  
Author(s):  
Dongxing Zheng ◽  
Junlu Gong ◽  
Chao Jin ◽  
Peng Li ◽  
Haili Bai

2014 ◽  
Vol 783-786 ◽  
pp. 1623-1627 ◽  
Author(s):  
Wolfgang Kleemann ◽  
Pavel Borisov ◽  
Xi Chen ◽  
Carolin Schmitz-Antoniak

Novel methods of switching magnetism with electric fields and vice versa, and aiming at magnetoelectric (ME) data processing are reported. First, the patented MERAM@ uses the electric field control of exchange bias via an epitaxial Cr2O3 layer and exchange coupling to a Pt/Co/Pt trilayer. It promises to crucially reduce Joule energy losses in RAM devices. Second, magnetic switching of the electric polarization by a transverse magnetic field in a 3-1 composite of a vertically poled BaTiO3 thick film embedding CoFe2O4 nanopillars produces a regular surface polarization pattern with rectangular symmetry. Its possible use for data processing is discussed.


2014 ◽  
Vol 2 (38) ◽  
pp. 8018-8022 ◽  
Author(s):  
Tae Y. Kim ◽  
Seungwoo Song ◽  
Hyun M. Jang ◽  
John A. Peters ◽  
Young K. Jeong

The exchange bias is significantly enhanced by the piezoelectric compressive strain stemming from the PMN–PT substrate when applying an electric field, leading to reversible magnetic switches.


2019 ◽  
Vol 5 (7) ◽  
pp. 1900192 ◽  
Author(s):  
Qu Yang ◽  
Zhongqiang Hu ◽  
Yao Zhang ◽  
Wei Su ◽  
YuXin Cheng ◽  
...  

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