HighKCapacitors and OFET Gate Dielectrics from Self-Assembled BaTiO3and (Ba,Sr)TiO3Nanocrystals in the Superparaelectric Limit

2010 ◽  
Vol 20 (4) ◽  
pp. 554-560 ◽  
Author(s):  
Limin Huang ◽  
Zhang Jia ◽  
Ioannis Kymissis ◽  
Stephen O'Brien
2019 ◽  
Vol 11 (44) ◽  
pp. 41561-41569 ◽  
Author(s):  
Masaya Kondo ◽  
Takafumi Uemura ◽  
Fumitaka Ishiwari ◽  
Takashi Kajitani ◽  
Yoshiaki Shoji ◽  
...  

2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.


RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64471-64477 ◽  
Author(s):  
Yan Yan ◽  
Ye Zhou ◽  
Long-Biao Huang ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  

Chemical vapor deposition (CVD) is utilized to form self-assembled monolayers on polymeric insulators. Ultraviolet/ozone (UVO) treatment is used to enhance the alignment of HMDS monolayer on polymeric insulator surface and a time dependent effect is observed for UVO.


2010 ◽  
Vol 22 (40) ◽  
pp. 4489-4493 ◽  
Author(s):  
Ute Zschieschang ◽  
Frederik Ante ◽  
Matthias Schlörholz ◽  
Maike Schmidt ◽  
Klaus Kern ◽  
...  

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