Physical Characterization of Ultra-thin High-k Dielectric

2007 ◽  
pp. 337-370 ◽  
Author(s):  
T. Conard ◽  
H. Bender ◽  
W. Vandervorst
Keyword(s):  
Physical Characterization ◽  
High K ◽  
High K Dielectric

Fabrication and Characterization of High-k Dielectric Nickel Titanate Thin Films Using a Modified Sol-Gel Method

2010 ◽  
Vol 94 (1) ◽  
pp. 250-254 ◽  
Author(s):  
Shiow-Huey Chuang ◽  
Min-Lung Hsieh ◽  
Shih-Chieh Wu ◽  
Hong-Cai Lin ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
High K ◽  
Nickel Titanate ◽  
Fabrication And Characterization ◽  
High K Dielectric

Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate

2011 ◽  
Vol 32 (5) ◽  
pp. 686-688 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Jung-Deuk Bok ◽  
Sang-Uk Park ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Gate ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
High K ◽  
High K Dielectric

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

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