Polysilicon Emitters

2004 ◽  
pp. 93-120
Keyword(s):  
Polysilicon Emitters

Self-Aligned Transistors with Polysilicon Emitters for Bipolar VLSI

1985 ◽  
Vol 20 (1) ◽  
pp. 162-167 ◽  
Author(s):  
A. Cuthbertson ◽  
P. Ashburn
Keyword(s):  
Polysilicon Emitters

Enhanced field emission from polysilicon emitters using porous silicon

2002 ◽  
Author(s):  
S.E. Pullen ◽  
M. Huang ◽  
S.E. Huq ◽  
E.C. Boswell ◽  
P.D. Prewett ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Field Emission ◽  
Polysilicon Emitters

The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth

1997 ◽  
Vol 3 (S2) ◽  
pp. 477-478
Author(s):  
M.G. Shlepr ◽  
G.A. Schrantz ◽  
A.L. Rivoli ◽  
G. Bajor
Keyword(s):  
Grain Growth ◽  
Solid Phase ◽  
Convergent Beam Electron Diffraction ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Process Technology ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Polysilicon Emitters ◽  
Convergent Beam

A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.

p/sup +/ polysilicon emitters for sub-0.5 mu m high-performance p-n-p

1992 ◽  
Vol 39 (11) ◽  
pp. 2637-2638
Author(s):  
J. Warnock ◽  
J.Y.C. Sun ◽  
S. Bhattacharya
Keyword(s):  
High Performance ◽  
Polysilicon Emitters

Polysilicon Integration

1990 ◽  
Vol 182 ◽  
Author(s):  
J. Ellul ◽  
I.D. Calder
Keyword(s):  
Integrated Circuits ◽  
Active Material ◽  
Three Dimensional ◽  
Cumulative Effect ◽  
Bicmos Technology ◽  
Silicon Integrated Circuits ◽  
New Process ◽  
Improved Performance ◽  
Polysilicon Emitters ◽  
Mos Gate

AbstractPolycrystalline silicon has found numerous applications in silicon integrated circuits, initially as a MOS gate material, and later for advanced isolation, capacitor electrodes, resistors, interconnect, bipolar emitters and bases, trench refill, doping sources, and the active material in thin film transistors. Integration of these techniques in a BiCMOS technology requires knowledge of the interactions between the processing steps, and their cumulative effect on the final device and circuit operation. New process techniques also present opportunities for process simplification, added functionality, or improved performance. Examples of polysilicon applications that interact with other process steps and influence device performance are P+ and N+ poly gates and silicidation of gate poly. Silicidation improves circuit speed and provides additional integration opportunities in the form of faster local interconnect, but it may create a problem for older designs with synchronous timing circuitry. More innovative integration of polysilicon includes improved deposition techniques, such as the use of amorphous silicon, “Lo-Hi” poly, in sinat doping, and deposition from disilane sources enable more flexible process design. Other innovations include polysilicon emitters, bases, and buried sinkers in bipolar design, polysilicon sidewall spacers in CMOS, and polysilicon based active transistors for display applications and three dimensional integration.

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