GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964367 ◽

2002 ◽

Cited By ~ 2

Author(s):

R. Welch ◽

T. Jenkins ◽

B. Neidhard ◽

L. Kehias ◽

T. Quach ◽

...

Keyword(s):

Low Noise

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Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964352 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Urteaga ◽

D. Scott ◽

T. Mathew ◽

S. Krishnan ◽

Y. Wei ◽

...

Keyword(s):

Single Stage

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40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964362 ◽

2002 ◽

Cited By ~ 5

Author(s):

A. Kurdoghlian ◽

M. Mokhtari ◽

C.H. Fields ◽

M. Wetzel ◽

M. Sokolich ◽

...

Keyword(s):

Tuning Range ◽

Wide Tuning Range ◽

Fully Integrated

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Recent advances in lithium battery technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964382 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.H. Miles

Keyword(s):

Lithium Battery ◽

Recent Advances ◽

Battery Technology

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Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964374 ◽

2002 ◽

Author(s):

S. Lee ◽

H.J. Kim ◽

M. Urteaga ◽

S. Krishnan ◽

Y. Wei ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction

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A 12-channel 2.5 Gb/s receiver IC for parallel optical interconnect

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964346 ◽

2002 ◽

Author(s):

B. Mayampurath ◽

A. Wu ◽

A. Armstrong

Keyword(s):

Optical Interconnect

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Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964338 ◽

2002 ◽

Cited By ~ 1

Author(s):

D. Barlas

Keyword(s):

Silicon Germanium ◽

Wireless Handsets

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Low noise, high-speed InP/InGaAs HBTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964375 ◽

2002 ◽

Cited By ~ 1

Author(s):

S.S.H. Hsu ◽

D. Pavlidis

Keyword(s):

High Speed ◽

Low Noise

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PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964350 ◽

2002 ◽

Cited By ~ 10

Author(s):

T. Hirayama ◽

N. Matsuno ◽

M. Fujii ◽

H. Hida

Keyword(s):

Power Amplifier ◽

Two Stage

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Clock and data recovery IC for 40 Gb/s fiber-optic receiver

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) ◽

10.1109/gaas.2001.964354 ◽

2002 ◽

Cited By ~ 5

Author(s):

G. Georgiou ◽

Y. Baeyens ◽

Y.-K. Chen ◽

C. Groepper ◽

P. Paschke ◽

...

Keyword(s):

Fiber Optic ◽

Clock And Data Recovery ◽

Data Recovery

Download Full-text

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT

Recent advances in lithium battery technology

Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

A 12-channel 2.5 Gb/s receiver IC for parallel optical interconnect

Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set

Low noise, high-speed InP/InGaAs HBTs

PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA

Clock and data recovery IC for 40 Gb/s fiber-optic receiver

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT

Recent advances in lithium battery technology

Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

A 12-channel 2.5 Gb/s receiver IC for parallel optical interconnect

Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set

Low noise, high-speed InP/InGaAs HBTs

PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA

Clock and data recovery IC for 40 Gb/s fiber-optic receiver

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
Latest Publications