2008 International Interconnect Technology Conference
Latest Publications

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Published By IEEE

9781424419111

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Performance Benchmarking for Graphene Nanoribbon, Carbon Nanotube, and Cu Interconnects

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546961 ◽

2008 ◽

Cited By ~ 44

Author(s):

Azad Naeemi ◽

James D. Meindl

Keyword(s):

Carbon Nanotube ◽

Graphene Nanoribbon ◽

Cu Interconnects ◽

Performance Benchmarking

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Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546913 ◽

2008 ◽

Cited By ~ 23

Author(s):

Riet Labie ◽

Wouter Ruythooren ◽

Kris Baert ◽

Eric Beyne ◽

Bart Swinnen

Keyword(s):

Device Stacking

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A Self-Aligned Air Gap Interconnect Process

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546917 ◽

2008 ◽

Cited By ~ 2

Author(s):

Hsien-Wei Chen ◽

Shin-Puu Jeng ◽

Hao-Yi Tsai ◽

Yu-Wen Liu ◽

CH Yu ◽

...

Keyword(s):

Air Gap

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An evaluation of electrografted copper seed layers for enhanced metallization of deep TSV structures

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546955 ◽

2008 ◽

Cited By ~ 8

Author(s):

S. Ledain ◽

C. Bunel ◽

P. Mangiagalli ◽

A. Carles ◽

N. Frederich ◽

...

Keyword(s):

Seed Layers

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Blech Effect and Lifetime Projection for Cu/Low-K Interconnects

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546941 ◽

2008 ◽

Cited By ~ 12

Author(s):

Cathryn Christiansen ◽

Baozhen Li ◽

Jason Gill

Keyword(s):

Low K

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Investigation of the impact of CoWp self-aligned barrier deposition on the porous siOC properties after a direct CMP process

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546944 ◽

2008 ◽

Author(s):

S. Gall ◽

S. Olivier ◽

M. Assou ◽

M. Bernard ◽

P.H. Haumesser ◽

...

Keyword(s):

The Impact

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Realization of via interconnects based on Carbon Nanotubes

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546953 ◽

2008 ◽

Cited By ~ 3

Author(s):

JC Coiffic ◽

M. Fayolle ◽

H. le Poche ◽

S. Maitrejean ◽

S. Olivier

Keyword(s):

Carbon Nanotubes

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Impact of Process Induced Stresses and Chip-Packaging Interaction on Reliability of Air-gap Interconnects

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546947 ◽

2008 ◽

Cited By ~ 3

Author(s):

Xuefeng Zhang ◽

Suk-Kyu Ryu ◽

Rui Huang ◽

Paul S. Ho ◽

Junjun Liu ◽

...

Keyword(s):

Air Gap ◽

Induced Stresses

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Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546923 ◽

2008 ◽

Cited By ~ 4

Author(s):

Y. Travaly ◽

J. van Aelst ◽

V. Truffert ◽

P. Verdonck ◽

T. Dupont ◽

...

Keyword(s):

Integration Scheme ◽

High Porosity ◽

Key Factors ◽

Low K

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Amorphous Ru / Polycrystalline Ru Highly Reliable Stacked Layer Barrier Technology

2008 International Interconnect Technology Conference ◽

10.1109/iitc.2008.4546938 ◽

2008 ◽

Cited By ~ 9

Author(s):

Shinichi Ogawa ◽

Nobuaki Tarumi ◽

Mitsuhide Abe ◽

Morio Shiohara ◽

Hiroki Imamura ◽

...

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2008 International Interconnect Technology ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Performance Benchmarking for Graphene Nanoribbon, Carbon Nanotube, and Cu Interconnects

Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking

A Self-Aligned Air Gap Interconnect Process

An evaluation of electrografted copper seed layers for enhanced metallization of deep TSV structures

Blech Effect and Lifetime Projection for Cu/Low-K Interconnects

Investigation of the impact of CoWp self-aligned barrier deposition on the porous siOC properties after a direct CMP process

Realization of via interconnects based on Carbon Nanotubes

Impact of Process Induced Stresses and Chip-Packaging Interaction on Reliability of Air-gap Interconnects

Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials

Amorphous Ru / Polycrystalline Ru Highly Reliable Stacked Layer Barrier Technology

2008 International Interconnect Technology Conference
Latest Publications