Fundamentals of Power Semiconductor Devices
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10

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1

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Published By Springer International Publishing

9783319939872, 9783319939889

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Breakdown Voltage

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_3 ◽

2018 ◽

pp. 89-170

Author(s):

B. Jayant Baliga

Keyword(s):

Breakdown Voltage

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Bipolar Junction Transistors

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_7 ◽

2018 ◽

pp. 521-639

Author(s):

B. Jayant Baliga

Keyword(s):

Bipolar Junction Transistors

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Introduction

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_1 ◽

2018 ◽

pp. 1-22 ◽

Cited By ~ 1

Author(s):

B. Jayant Baliga

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Thyristors

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_8 ◽

2018 ◽

pp. 641-753

Author(s):

B. Jayant Baliga

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P-i-N Rectifiers

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_5 ◽

2018 ◽

pp. 207-282

Author(s):

B. Jayant Baliga

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Power MOSFETs

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_6 ◽

2018 ◽

pp. 283-520 ◽

Cited By ~ 3

Author(s):

B. Jayant Baliga

Keyword(s):

Power Mosfets

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Insulated Gate Bipolar Transistors

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_9 ◽

2018 ◽

pp. 755-1044 ◽

Cited By ~ 1

Author(s):

B. Jayant Baliga

Keyword(s):

Bipolar Transistors ◽

Insulated Gate Bipolar Transistors

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Material Properties and Transport Physics

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_2 ◽

2018 ◽

pp. 23-87

Author(s):

B. Jayant Baliga

Keyword(s):

Material Properties

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Schottky Rectifiers

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_4 ◽

2018 ◽

pp. 171-206

Author(s):

B. Jayant Baliga

Keyword(s):

Schottky Rectifiers

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Synopsis

Fundamentals of Power Semiconductor Devices ◽

10.1007/978-3-319-93988-9_10 ◽

2018 ◽

pp. 1045-1066

Author(s):

B. Jayant Baliga

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