GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780355857

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Novel low-cost process for 0.1-μm T-shaped gate of InGaP/InGaAs pseudomorphic hemt

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803749 ◽

2005 ◽

Author(s):

M. Sugiura ◽

K. Morizuka

Keyword(s):

Low Cost

Download Full-text

77 GHz fully-MMIC automotive forward-looking radar [using pHEMTs]

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803760 ◽

2003 ◽

Cited By ~ 4

Author(s):

H. Kondoh ◽

K. Sekine ◽

S. Takatani ◽

K. Takano ◽

H. Kuroda ◽

...

Keyword(s):

77 Ghz ◽

Forward Looking

Download Full-text

A highly integrated MMIC chipset for a 40 GHz MVDS transceiver subscriber terminal

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803738 ◽

2003 ◽

Author(s):

C. Dourlens ◽

A.M. Couturier ◽

R. Sevin ◽

P. Quentin ◽

D. Pons

Keyword(s):

Subscriber Terminal

Download Full-text

Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803752 ◽

2003 ◽

Author(s):

R. Menozzi ◽

D. Dieci ◽

M. Messori ◽

G. Sozzi ◽

C. Lanzieri ◽

...

Keyword(s):

Hot Electron ◽

Bias Point

Download Full-text

A GaAs +3V low noise integrated downconverter for C-band applications [using MESFETs]

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803757 ◽

2003 ◽

Cited By ~ 1

Author(s):

C. Trantanella ◽

P. Blount ◽

M. Shifrin

Keyword(s):

Low Noise

Download Full-text

94/47 GHz regenerative frequency divider MMIC with low conversion loss

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803765 ◽

2003 ◽

Author(s):

S. Kudszus ◽

W.H. Haydl ◽

M. Neumann ◽

A. Hulsmann

Keyword(s):

Frequency Divider ◽

Conversion Loss

Download Full-text

A <25% PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFET technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803732 ◽

2003 ◽

Cited By ~ 2

Author(s):

K. Krishnamurthy ◽

M.J.W. Rodwell ◽

S.I. Long

Keyword(s):

Power Amplifier

Download Full-text

Millimeter-wave monolithic GaAs IC interconnect and packaging technology trends in Japan

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803737 ◽

2003 ◽

Cited By ~ 1

Author(s):

K. Ohata

Keyword(s):

Millimeter Wave ◽

Packaging Technology ◽

Technology Trends

Download Full-text

Status and roadmap of GaAs technology in Georgia, former Soviet Union

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803721 ◽

2003 ◽

Author(s):

N.P. Khuchua ◽

A.B. Gerasimov ◽

R.I. Chikovani ◽

Z.D. Chakhnakia ◽

L.V. Khvedelidze ◽

...

Keyword(s):

Soviet Union ◽

Former Soviet Union

Download Full-text

Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803743 ◽

2003 ◽

Author(s):

T. Sasaki ◽

Y. Takada ◽

Y. Tanabe ◽

T. Nitta ◽

Y. Kakiuchi ◽

...

Download Full-text

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel low-cost process for 0.1-μm T-shaped gate of InGaP/InGaAs pseudomorphic hemt

77 GHz fully-MMIC automotive forward-looking radar [using pHEMTs]

A highly integrated MMIC chipset for a 40 GHz MVDS transceiver subscriber terminal

Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

A GaAs +3V low noise integrated downconverter for C-band applications [using MESFETs]

94/47 GHz regenerative frequency divider MMIC with low conversion loss

A <25% PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFET technology

Millimeter-wave monolithic GaAs IC interconnect and packaging technology trends in Japan

Status and roadmap of GaAs technology in Georgia, former Soviet Union

Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)
Latest Publications