Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)
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Frequency conversion of flicker noise in bipolar junction transistors

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741918 ◽

2002 ◽

Cited By ~ 4

Author(s):

J.E. Sanchez ◽

G. Bosman

Keyword(s):

Frequency Conversion ◽

Flicker Noise ◽

Bipolar Junction Transistors

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A simulation-free systematic approach for analysis of noise in emitter-coupled pair bipolar mixers

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741884 ◽

2002 ◽

Author(s):

Yutao Hu ◽

K. Mayaram

Keyword(s):

Systematic Approach

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A new class of lateral power devices for HVIC's based on the 3D RESURF concept

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741921 ◽

2002 ◽

Cited By ~ 4

Author(s):

F. Udrea ◽

A. Popescu ◽

W.I. Milne

Keyword(s):

Power Devices ◽

New Class

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Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741877 ◽

2002 ◽

Cited By ~ 3

Author(s):

K. Ohhata ◽

T. Masuda ◽

E. Ohue ◽

K. Washio

Keyword(s):

Dynamic Range ◽

Wide Dynamic Range ◽

Sige Hbt

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QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741896 ◽

2002 ◽

Cited By ~ 9

Author(s):

A. Pruijmboom ◽

D. Szmyd ◽

R. Brock ◽

R. Wall ◽

N. Morris ◽

...

Keyword(s):

Production Technology ◽

60 Ghz ◽

High Quality ◽

Passive Components ◽

Wireless Telecommunication

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Introduction to RF simulation and its application

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741883 ◽

2002 ◽

Cited By ~ 7

Author(s):

K. Kundert

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Improved extraction method for the emitter resistance of bipolar transistors

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741927 ◽

2002 ◽

Cited By ~ 1

Author(s):

R. Gabl ◽

M. Reisch ◽

M. Pohl

Keyword(s):

Extraction Method ◽

Bipolar Transistors

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A compact tunneling current and collector breakdown model

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741925 ◽

2002 ◽

Cited By ~ 10

Author(s):

M. Schroter ◽

Z. Yan ◽

T.Y. Lee ◽

W. Shi

Keyword(s):

Tunneling Current ◽

Breakdown Model

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Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741920 ◽

2002 ◽

Cited By ~ 2

Author(s):

R. Zhu ◽

V. Parthasarathy ◽

J. Capilla ◽

W. Peterson ◽

M. Bacchi ◽

...

Keyword(s):

Smart Power

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40 Gb/s integrated clock and data recovery circuit in a silicon bipolar technology

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198) ◽

10.1109/bipol.1998.741905 ◽

2002 ◽

Cited By ~ 7

Author(s):

M. Wurzer ◽

J. Bock ◽

W. Zirwas ◽

H. Knapp ◽

F. Schumann ◽

...

Keyword(s):

Clock And Data Recovery ◽

Data Recovery ◽

Bipolar Technology ◽

Silicon Bipolar Technology

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Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Frequency conversion of flicker noise in bipolar junction transistors

A simulation-free systematic approach for analysis of noise in emitter-coupled pair bipolar mixers

A new class of lateral power devices for HVIC's based on the 3D RESURF concept

Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

Introduction to RF simulation and its application

Improved extraction method for the emitter resistance of bipolar transistors

A compact tunneling current and collector breakdown model

Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications

40 Gb/s integrated clock and data recovery circuit in a silicon bipolar technology

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)
Latest Publications