Silicon Carbide - Advanced Texts in Physics
Latest Publications

TOTAL DOCUMENTS

36
(FIVE YEARS 0)

H-INDEX

7
(FIVE YEARS 0)

Published By Springer Berlin Heidelberg

9783642623332, 9783642188701
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Epitaxial Growth and Device Processing of SiC on Non-Basal Planes

2004 ◽  
pp. 711-733 ◽  
Author(s):  
T. Kimoto ◽  
H. Yano ◽  
Y. Negoro ◽  
K. Hashimoto ◽  
H. Matsunami
Keyword(s):  
Epitaxial Growth ◽  
Device Processing

Development of SiC Devices for Microwave and RF Power Amplifiers

2004 ◽  
pp. 839-868 ◽  
Author(s):  
E. Morvan ◽  
A. Kerlain ◽  
C. Dua ◽  
C. Brylinski
Keyword(s):  
Power Amplifiers ◽  
Rf Power Amplifiers ◽  
Rf Power

Hall Scattering Factor for Electrons and Holes in SiC

2004 ◽  
pp. 517-536 ◽  
Author(s):  
F. Schmid ◽  
M. Krieger ◽  
M. Laube ◽  
G. Pensl ◽  
G. Wagner
Keyword(s):  
Scattering Factor

Zero- and Two-Dimensional Native Defects

2004 ◽  
pp. 3-25 ◽  
Author(s):  
F. Bechstedt ◽  
J. Furthmüller ◽  
U. Grossner ◽  
C. Raffy
Keyword(s):  
Two Dimensional ◽  
Native Defects

Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates

2004 ◽  
pp. 207-228 ◽  
Author(s):  
H. Nagasawa ◽  
K. Yagi ◽  
T. Kawahara ◽  
N. Hatta ◽  
G. Pensl ◽  
...  

Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC

2004 ◽  
pp. 437-460 ◽  
Author(s):  
N. T. Son ◽  
C. Persson ◽  
U. Lindefelt ◽  
W. M. Chen ◽  
B. K. Meyer ◽  
...  
Keyword(s):  
Band Structure ◽  
Cyclotron Resonance ◽  
Effective Masses
Load More ...
Sign in / Sign up

Export Citation Format

Share Document