Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.
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Noise and thz rectification characteristics of zero-bias quantum tunneling sb-heterostructure diodes

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549669 ◽

2005 ◽

Cited By ~ 1

Author(s):

A. Luukanen ◽

E.N. Grossman ◽

H.P. Moyer ◽

J.N. Schulman

Keyword(s):

Quantum Tunneling ◽

Zero Bias

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Photocapacitance of gaas thin-film structures fabricated on a semi-insulating compensated substrate

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549687 ◽

2005 ◽

Author(s):

N.B. Gorev ◽

I.F. Kodzhespirova ◽

E.N. Privalov ◽

N. Khuchua ◽

L. Khvedelidze ◽

...

Keyword(s):

Thin Film

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A new field-plated GaN HEMT structure with improved power and noise performance

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549692 ◽

2005 ◽

Cited By ~ 1

Author(s):

Hongtao Xu ◽

C. Sanabria ◽

A. Chini ◽

Yun Wei ◽

S. Heikman ◽

...

Keyword(s):

Noise Performance ◽

Gan Hemt ◽

Hemt Structure

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Native defect compensation in III-antimonide bulk substrates

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549668 ◽

2005 ◽

Author(s):

R. Pino ◽

Youngok Ko ◽

P.S. Dutta

Keyword(s):

Native Defect

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High linearity GaN HEMT power amplifier with pre-linearization gate diode

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549698 ◽

2005 ◽

Cited By ~ 1

Author(s):

Shouxuan Xie ◽

V. Paidi ◽

S. Heikman ◽

Likun Shen ◽

A. Chini ◽

...

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

High Linearity

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Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549685 ◽

2005 ◽

Author(s):

S.A. Vitusevich ◽

S.V. Danylyuk ◽

N. Klein ◽

M.V. Petrychuk ◽

A. Vertiatchikh ◽

...

Keyword(s):

Mole Fraction ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Parameters ◽

Gan Heterostructure

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Stable high power GaN-ON-GaN HEMT

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549681 ◽

2005 ◽

Cited By ~ 1

Author(s):

K.K. Chu ◽

P.C. Chao ◽

J.A. Windyka

Keyword(s):

High Power ◽

Gan Hemt

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High-voltage diamond Schottky rectifiers

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549702 ◽

2005 ◽

Cited By ~ 2

Author(s):

W. Huang ◽

T.P. Chow ◽

J. Yang ◽

J.E. Butler

Keyword(s):

High Voltage ◽

Schottky Rectifiers

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High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial gaas VLSI process

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549677 ◽

2005 ◽

Author(s):

W.P. Giziewicz ◽

C.G. Fonstad ◽

S. Prasad

Keyword(s):

High Speed

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GaN MOS-HEMT using atomic layer deposition Al/sub 2/O/sub 3/ as gate dielectric and surface passivation

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549689 ◽

2005 ◽

Author(s):

P.D. Yet ◽

B. Yang ◽

K.K. Ng ◽

J. Bude ◽

G.D. Wilk ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Surface Passivation ◽

Gate Dielectric ◽

Atomic Layer ◽

Layer Deposition

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Noise and thz rectification characteristics of zero-bias quantum tunneling sb-heterostructure diodes

Photocapacitance of gaas thin-film structures fabricated on a semi-insulating compensated substrate

A new field-plated GaN HEMT structure with improved power and noise performance

Native defect compensation in III-antimonide bulk substrates

High linearity GaN HEMT power amplifier with pre-linearization gate diode

Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction

Stable high power GaN-ON-GaN HEMT

High-voltage diamond Schottky rectifiers

High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial gaas VLSI process

GaN MOS-HEMT using atomic layer deposition Al/sub 2/O/sub 3/ as gate dielectric and surface passivation

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.
Latest Publications