New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices
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22

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3

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Published By Elsevier

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Foreword

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80014-7 ◽

1999 ◽

pp. 523

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Chapter 4 Hot carrier injections in SIO2 and related instabilities in submicrometer mosfets

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80010-x ◽

1999 ◽

pp. 265-339 ◽

Cited By ~ 3

Author(s):

D. Vuillaume

Keyword(s):

Hot Carrier

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Introduction to volume 3

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80003-2 ◽

1999 ◽

pp. xiii-xvi

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Foreword

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80002-0 ◽

1999 ◽

pp. ix-xi

Author(s):

George C. Messenger

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Chapter 7 The study of thermal nitridation and reoxidation mechanisms using isotopic tracing methods

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80013-5 ◽

1999 ◽

pp. 495-520 ◽

Cited By ~ 1

Author(s):

J.-J. Ganem ◽

J.J.R. Baumvol

Keyword(s):

Isotopic Tracing ◽

Thermal Nitridation

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Chapter 11 Defects and radiation-induced charge-trapping phenomena in SiO2

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80018-4 ◽

1999 ◽

pp. 723-780 ◽

Cited By ~ 2

Author(s):

P. Paillet ◽

J.L. Leray

Keyword(s):

Charge Trapping ◽

Radiation Induced ◽

Induced Charge

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Subject index

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80021-4 ◽

1999 ◽

pp. 917-933

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Chapter 6 Charge pumping techniques

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80012-3 ◽

1999 ◽

pp. 405-493 ◽

Cited By ~ 11

Author(s):

J.L. Autran ◽

B. Balland ◽

G. Barbottin

Keyword(s):

Charge Pumping

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Chapter 1 Silica, silicon nitride and oxynitride thin films

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80007-x ◽

1999 ◽

pp. 3-144 ◽

Cited By ~ 3

Author(s):

B. Balland ◽

A. Glachant

Keyword(s):

Thin Films ◽

Silicon Nitride

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Chapter 12 The effects of cosmic ions on electronic components

New Insulators, Devices and Radiation Effects - Instabilities in Silicon Devices ◽

10.1016/s1874-5903(99)80019-6 ◽

1999 ◽

pp. 781-890

Author(s):

O. Musseau

Keyword(s):

Electronic Components

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