2012 IEEE International Integrated Reliability Workshop Final Report
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781467327527, 9781467327497, 9781467327510

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468955 ◽

2012 ◽

Author(s):

K. B. Geoghegan ◽

J. J. Siddiqui ◽

T. R. Weatherford

Keyword(s):

Gate Dielectric

Download Full-text

High-k MOSFET performance degradation by plasma process-induced charging damage — Impacts on device parameter variation

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468925 ◽

2012 ◽

Cited By ~ 4

Author(s):

Koji Eriguchi ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

Kouichi Ono

Keyword(s):

Parameter Variation ◽

Performance Degradation ◽

Plasma Process ◽

Device Parameter ◽

High K

Download Full-text

Program disturbs and process optimization in a 65 nm Flash FPGA

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468933 ◽

2012 ◽

Author(s):

James Yingbo Jia ◽

Pavan Singaraju ◽

Habtom Micael ◽

Patty Liu ◽

Salim Sammie ◽

...

Keyword(s):

Process Optimization

Download Full-text

Reliability aspects of GaN based power devices for high voltage switching applications

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468959 ◽

2012 ◽

Author(s):

Joachim Wurfl

Keyword(s):

High Voltage ◽

Power Devices ◽

Voltage Switching

Download Full-text

HBT reliability modeling strategy for BICMOS RF and mmW applications

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468931 ◽

2012 ◽

Author(s):

S. Ighilahriz ◽

F. Cacho ◽

V. Huard ◽

L. Moquillon ◽

P. Benech ◽

...

Keyword(s):

Reliability Modeling ◽

Modeling Strategy

Download Full-text

On the correlation between NBTI, SILC, and flicker noise

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468921 ◽

2012 ◽

Cited By ~ 2

Author(s):

P.-J. Wagner ◽

B. Kaczer ◽

A. Scholten ◽

H. Reisinger ◽

S. Bychikhin ◽

...

Keyword(s):

Flicker Noise

Download Full-text

Degradation of GaN high-electron mobility transistors in voltage step stress

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468935 ◽

2012 ◽

Cited By ~ 2

Author(s):

Xinhua Wang ◽

Lei Pang ◽

Jianhui Wang ◽

Tingting Yuan ◽

Weijun Luo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Voltage Step ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Experimentally demonstrated filament-based switching mechanism for Al/CuxO/Cu memristive devices

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468954 ◽

2012 ◽

Author(s):

N. R. McDonald ◽

S. M. Bishop ◽

N. C. Cady

Keyword(s):

Switching Mechanism

Download Full-text

Vehicle reliability field data analysis — Best practise at Mercedes-Benz cars

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468958 ◽

2012 ◽

Author(s):

Matthias Grabert ◽

Johann-Friedrich Luy

Keyword(s):

Data Analysis ◽

Field Data ◽

Field Data Analysis

Download Full-text

On component reliability and system reliability for automotive applications

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468947 ◽

2012 ◽

Cited By ~ 6

Author(s):

A. Aal ◽

T. Polte

Keyword(s):

System Reliability ◽

Automotive Applications ◽

Component Reliability

Download Full-text

2012 IEEE International Integrated Reliability Workshop Final ReportLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric

High-k MOSFET performance degradation by plasma process-induced charging damage — Impacts on device parameter variation

Program disturbs and process optimization in a 65 nm Flash FPGA

Reliability aspects of GaN based power devices for high voltage switching applications

HBT reliability modeling strategy for BICMOS RF and mmW applications

On the correlation between NBTI, SILC, and flicker noise

Degradation of GaN high-electron mobility transistors in voltage step stress

Experimentally demonstrated filament-based switching mechanism for Al/CuxO/Cu memristive devices

Vehicle reliability field data analysis — Best practise at Mercedes-Benz cars

On component reliability and system reliability for automotive applications

2012 IEEE International Integrated Reliability Workshop Final Report
Latest Publications