Bias Temperature Instability for Devices and Circuits
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Published By Springer New York

9781461479086, 9781461479093
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Charge Trapping in MOSFETS: BTI and RTN Modeling for Circuits

2013 ◽  
pp. 751-782 ◽  
Author(s):  
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Yu Cao ◽  
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Keyword(s):  
Charge Trapping

Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors

2013 ◽  
pp. 533-559 ◽  
Author(s):  
Ninoslav Stojadinović ◽  
Ivica Manić ◽  
Danijel Danković ◽  
Snežana Djorić-Veljković ◽  
Vojkan Davidović ◽  
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Keyword(s):  
Negative Bias ◽  
Mos Transistors ◽  
Negative Bias Temperature Instability ◽  
Gate Oxides ◽  
Temperature Instability ◽  
Bias Temperature Instability

Statistical Distribution of Defect Parameters

2013 ◽  
pp. 161-176 ◽  
Author(s):  
B. Kaczer ◽  
M. Toledano-Luque ◽  
J. Franco ◽  
P. Weckx
Keyword(s):  
Statistical Distribution

Bias-Temperature Instabilities in Silicon Carbide MOS Devices

2013 ◽  
pp. 661-675 ◽  
Author(s):  
D. M. Fleetwood ◽  
E. X. Zhang ◽  
X. Shen ◽  
C. X. Zhang ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mos Devices ◽  
Bias Temperature Instabilities

PBTI in High-k Oxides

2013 ◽  
pp. 585-596
Author(s):  
Chadwin D. Young ◽  
Gennadi Bersuker
Keyword(s):  
High K
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