2007 Non-Volatile Memory Technology Symposium
Latest Publications

TOTAL DOCUMENTS

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Published By IEEE

9781424413614

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389947 ◽

2007 ◽

Cited By ~ 4

Author(s):

D. Hayashigawa ◽

D.A. Kamp ◽

A.D. DeVilbiss

Keyword(s):

Radiation Hardened ◽

Ferroelectric Memory

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Resistive switching in Ag-Ge-Se with extremely low write currents

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389953 ◽

2007 ◽

Cited By ~ 23

Author(s):

C. Schindler ◽

M. Meier ◽

R. Waser ◽

M.N. Kozicki

Keyword(s):

Resistive Switching

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Solid electrolyte memory for flexible electronics

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389954 ◽

2007 ◽

Cited By ~ 2

Author(s):

S.R. Baliga ◽

S.C.P. Thermadam ◽

D. Kamalanathan ◽

D.R. Allee ◽

M.N. Kozicki

Keyword(s):

Solid Electrolyte ◽

Flexible Electronics

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Roles of Oxygen in Crystalline GST and at the GST/TiAlN Interface

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389942 ◽

2007 ◽

Cited By ~ 1

Author(s):

A.H. Edwards ◽

A.C. Pineda ◽

P.A. Schultz

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A high-rel embedded ferroelectric memory

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389946 ◽

2007 ◽

Cited By ~ 7

Author(s):

Alan D. DeVilbiss ◽

David A. Kamp

Keyword(s):

Ferroelectric Memory

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Design of a 1 Gb Radiation Hardened NAND flash memory

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389936 ◽

2007 ◽

Cited By ~ 1

Author(s):

N. Gupta ◽

B. Vermeire ◽

H. Barnaby ◽

M. Goksel ◽

E. Li ◽

...

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Radiation Hardened

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Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389948 ◽

2007 ◽

Cited By ~ 4

Author(s):

J. Rodriguez ◽

K. Remack ◽

J. Gertas ◽

K. Boku ◽

K.R. Udayakumar ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Cmos Process ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Alumina as a Hydrogen Barrier Layer for FeRAM Devices

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389944 ◽

2007 ◽

Author(s):

A. Chowdhury ◽

J. Kim ◽

R.M. Wallace

Keyword(s):

Barrier Layer

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2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389933 ◽

2007 ◽

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Copper sulfide-based resistance change memory

2007 Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2007.4389951 ◽

2007 ◽

Cited By ~ 2

Author(s):

Sung-Woo Kim ◽

Y. Nishi

Keyword(s):

Copper Sulfide ◽

Resistance Change ◽

Change Memory

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2007 Non-Volatile Memory Technology Symposium
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory

Resistive switching in Ag-Ge-Se with extremely low write currents

Solid electrolyte memory for flexible electronics

Roles of Oxygen in Crystalline GST and at the GST/TiAlN Interface

A high-rel embedded ferroelectric memory

Design of a 1 Gb Radiation Hardened NAND flash memory

Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Alumina as a Hydrogen Barrier Layer for FeRAM Devices

Table of contents

Copper sulfide-based resistance change memory

Export Citation Format

2007 Non-Volatile Memory Technology SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory

Resistive switching in Ag-Ge-Se with extremely low write currents

Solid electrolyte memory for flexible electronics

Roles of Oxygen in Crystalline GST and at the GST/TiAlN Interface

A high-rel embedded ferroelectric memory

Design of a 1 Gb Radiation Hardened NAND flash memory

Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Alumina as a Hydrogen Barrier Layer for FeRAM Devices

Table of contents

Copper sulfide-based resistance change memory

2007 Non-Volatile Memory Technology Symposium
Latest Publications