Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors
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Published By Springer Berlin Heidelberg

9783642816062, 9783642816048

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Theory of Electronic Properties of Amorphous Semiconductors

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_10 ◽

1981 ◽

pp. 119-144 ◽

Cited By ~ 17

Author(s):

Fumiko Yonezawa ◽

Morrel H. Cohen

Keyword(s):

Electronic Properties ◽

Amorphous Semiconductors

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New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_7 ◽

1981 ◽

pp. 72-86 ◽

Cited By ~ 6

Author(s):

William Paul

Keyword(s):

Amorphous Semiconductors

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The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_6 ◽

1981 ◽

pp. 56-71 ◽

Cited By ~ 2

Author(s):

M. H. Brodsky

Keyword(s):

Amorphous Silicon ◽

Electronic Properties

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Doping and the Density of States of Amorphous Silicon

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_5 ◽

1981 ◽

pp. 46-55 ◽

Cited By ~ 7

Author(s):

P. G. LeComber

Keyword(s):

Amorphous Silicon ◽

Density Of States

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The Past, Present and Future of Amorphous Silicon

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_4 ◽

1981 ◽

pp. 40-45

Author(s):

W. E. Spear

Keyword(s):

Amorphous Silicon ◽

The Past

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Defects in Covalent Amorphous Semiconductors

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_2 ◽

1981 ◽

pp. 14-32 ◽

Cited By ~ 2

Author(s):

David Adler

Keyword(s):

Amorphous Semiconductors

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Photo-Induced Phenomena in Amorphous Semiconductors

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_9 ◽

1981 ◽

pp. 104-118 ◽

Cited By ~ 12

Author(s):

Kazunobu Tanaka

Keyword(s):

Amorphous Semiconductors

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Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_3 ◽

1981 ◽

pp. 33-39 ◽

Cited By ~ 7

Author(s):

I. Solomon

Keyword(s):

Thin Films ◽

Transport Properties ◽

Surface Effects ◽

Hydrogenated Silicon

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Summary Talk

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_13 ◽

1981 ◽

pp. 164-165

Author(s):

Hajimu Kawamura

Keyword(s):

Summary Talk

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The Anderson Localisation Problem

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors ◽

10.1007/978-3-642-81604-8_12 ◽

1981 ◽

pp. 155-163 ◽

Cited By ~ 3

Author(s):

D. Weaire

Keyword(s):

Anderson Localisation

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Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous SemiconductorsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Theory of Electronic Properties of Amorphous Semiconductors

New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs

The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon

Doping and the Density of States of Amorphous Silicon

The Past, Present and Future of Amorphous Silicon

Defects in Covalent Amorphous Semiconductors

Photo-Induced Phenomena in Amorphous Semiconductors

Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon

Summary Talk

The Anderson Localisation Problem

Springer Series in Solid-State Sciences - Fundamental Physics of Amorphous Semiconductors
Latest Publications