Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
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"on-glass" process option for BiCMOS technology

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365747 ◽

2004 ◽

Cited By ~ 1

Author(s):

E. Aksen ◽

W.D. van Noort ◽

D. Bower ◽

N. Bell ◽

R. Dekker ◽

...

Keyword(s):

Bicmos Technology ◽

Glass Process

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Barrier effects in SiGe HBT: modeling of high-injection base current increase

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365756 ◽

2004 ◽

Cited By ~ 3

Author(s):

S. Fregonese ◽

T. Zimmer ◽

C. Maneux ◽

P.Y. Sulima

Keyword(s):

Current Increase ◽

Sige Hbt ◽

Base Current ◽

Barrier Effects ◽

High Injection

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A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365790 ◽

2004 ◽

Cited By ~ 4

Author(s):

D. Knoll ◽

B. Heinemann ◽

R. Barth ◽

K. Blum ◽

J. Borngraber ◽

...

Keyword(s):

Low Cost ◽

Bicmos Process

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SiGe technology requirements for millimeter-wave applications

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365750 ◽

2004 ◽

Cited By ~ 5

Author(s):

P. Wennekers ◽

R. Reuter

Keyword(s):

Millimeter Wave

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Optimisation of LNA and PA and circuits for a 1.8 V BiCMOS Si bluetooth transceiver

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365744 ◽

2004 ◽

Author(s):

E. van der Heijden ◽

H. Veenstra

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Vertical profile design and transit time analysis of nano-scale SiGe HBTs for terahertz fT

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365783 ◽

2004 ◽

Cited By ~ 4

Author(s):

Yun Shi ◽

Guofu Niu

Keyword(s):

Transit Time ◽

Vertical Profile ◽

Time Analysis ◽

Nano Scale ◽

Profile Design

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A wideband fully integrated 0.25μm BiCMOS 5GHz medium power amplifier

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365808 ◽

2004 ◽

Cited By ~ 1

Author(s):

M. Vaiana ◽

G. Gramegna ◽

M. Paparo

Keyword(s):

Power Amplifier ◽

Fully Integrated

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A 675 μW 5 GHz low-voltage BiCMOS synchronized ring oscillator based prescaler

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365791 ◽

2004 ◽

Cited By ~ 2

Author(s):

O. Mazouffre ◽

H. Lapuyade ◽

J.-B. Bdgueret ◽

A. Cathelin ◽

D. Belot ◽

...

Keyword(s):

Low Voltage ◽

Ring Oscillator ◽

5 Ghz

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A 60 GHz broadband amplifier in SiGe bipolar technology

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365803 ◽

2004 ◽

Cited By ~ 14

Author(s):

W. Perndl ◽

W. Wilhelm ◽

H. Knapp ◽

M. Wurzer ◽

K. Aufinger ◽

...

Keyword(s):

60 Ghz ◽

Bipolar Technology ◽

Broadband Amplifier

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On the suitability of SiGe HBTs for high-temperature (to 300°C) electronics

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting ◽

10.1109/bipol.2004.1365784 ◽

2004 ◽

Author(s):

Tianbing Chen ◽

W.-M.L. Kuo ◽

Enhai Zhao ◽

Qingqing Liang ◽

Zhenrong Jin ◽

...

Keyword(s):

High Temperature

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

"on-glass" process option for BiCMOS technology

Barrier effects in SiGe HBT: modeling of high-injection base current increase

A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

SiGe technology requirements for millimeter-wave applications

Optimisation of LNA and PA and circuits for a 1.8 V BiCMOS Si bluetooth transceiver

Vertical profile design and transit time analysis of nano-scale SiGe HBTs for terahertz fT

A wideband fully integrated 0.25μm BiCMOS 5GHz medium power amplifier

A 675 μW 5 GHz low-voltage BiCMOS synchronized ring oscillator based prescaler

A 60 GHz broadband amplifier in SiGe bipolar technology

On the suitability of SiGe HBTs for high-temperature (to 300°C) electronics

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Latest Publications