2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)
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Comparison of silicon carbide and GaAs Schottky diode

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995725 ◽

2002 ◽

Author(s):

J. Luo ◽

K. Chung ◽

H. Huang ◽

J.B. Bernstein

Keyword(s):

Silicon Carbide ◽

Schottky Diode

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Comparative thermal characterizations of GaAs and SiC devices

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995723 ◽

2002 ◽

Author(s):

J.A. Mittereder ◽

W.T. Anderson ◽

F.A. Buot ◽

D.E. Ioannou

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Channel-substrate current and breakdown characteristics in GaAs MESFETs with varied MBE buffer thickness

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995737 ◽

2002 ◽

Author(s):

F. Gao ◽

R. Chanana ◽

T. Nicholls

Keyword(s):

Substrate Current

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Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995741 ◽

2002 ◽

Cited By ~ 4

Author(s):

R.E. Welser ◽

P.M. DeLuca

Keyword(s):

Physical Mechanisms

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Reliability issues in GaAs-based devices for space applications

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995727 ◽

2002 ◽

Author(s):

R. Leon ◽

J. Okuno ◽

R. Ruiz ◽

M. Gallegos ◽

D.T. Vu

Keyword(s):

Space Applications

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Getting to zero - methods of reducing defects

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995730 ◽

2002 ◽

Author(s):

W.J. Roesch

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Determination of reliability on MOCVD grown InGaP/GaAs HBT's under both thermal and current acceleration stresses

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995743 ◽

2002 ◽

Cited By ~ 4

Author(s):

K.T. Feng ◽

L. Rushing ◽

P. Canfield ◽

L. Flores

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Reliability of metamorphic HEMTs on GaAs substrates

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995739 ◽

2002 ◽

Cited By ~ 5

Author(s):

P.F. Marsh ◽

C.S. Whelan ◽

W.E. Hoke ◽

R.E. Leoni ◽

T.E. Kazior

Keyword(s):

Gaas Substrates

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Effect of gate metal on reliability of metamorphic HEMTs

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995734 ◽

2002 ◽

Cited By ~ 11

Author(s):

M. Dammann ◽

A. Leuther ◽

H. Konstanzer ◽

W. Jantz

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Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995748 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Fresina ◽

M. Logue ◽

J. Fendrich ◽

T. Rogers

Keyword(s):

Aluminum Concentration ◽

Beryllium Doping

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2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Comparison of silicon carbide and GaAs Schottky diode

Comparative thermal characterizations of GaAs and SiC devices

Channel-substrate current and breakdown characteristics in GaAs MESFETs with varied MBE buffer thickness

Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs

Reliability issues in GaAs-based devices for space applications

Getting to zero - methods of reducing defects

Determination of reliability on MOCVD grown InGaP/GaAs HBT's under both thermal and current acceleration stresses

Reliability of metamorphic HEMTs on GaAs substrates

Effect of gate metal on reliability of metamorphic HEMTs

Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)
Latest Publications