Field Effect in Semiconductor-Electrolyte Interfaces
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(FIVE YEARS 16)

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Published By Princeton University Press

9780691223728, 0691223726, 9780691121765

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Front Matter

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.1 ◽

2021 ◽

pp. i-iv

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Introduction

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.5 ◽

2021 ◽

pp. xiii-xx

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Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte Interfaces:

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.8 ◽

2021 ◽

pp. 15-29

Keyword(s):

Field Effect ◽

Quasi Equilibrium

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Semiconductor-Electrolyte Interface:

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.6 ◽

2021 ◽

pp. 1-6

Keyword(s):

Electrolyte Interface

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Technique of FESE Method and Some Possibilities for Its Technological Applications

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.13 ◽

2021 ◽

pp. 136-152

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Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.2 ◽

2021 ◽

pp. v-vi

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Field Effect in Semiconductor-Electrolyte Interfaces on Nonequilibrium Depletion of Free Charge Carriers from Semiconductor

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.9 ◽

2021 ◽

pp. 30-36

Keyword(s):

Field Effect ◽

Charge Carriers ◽

Free Charge

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Application of Field Effect in Semiconductor-Electrolyte Interfaces for Studies of Surface Charge Layer Characteristics of Semiconductors and Semimetals

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.10 ◽

2021 ◽

pp. 37-87

Keyword(s):

Surface Charge ◽

Field Effect ◽

Charge Layer

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Size Quantization in the Semiconductor-Electrolyte System

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.12 ◽

2021 ◽

pp. 109-135

Keyword(s):

Size Quantization ◽

Electrolyte System

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Conclusion

Field Effect in Semiconductor-Electrolyte Interfaces ◽

10.2307/j.ctv18gfzm2.14 ◽

2021 ◽

pp. 153-154

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Field Effect in Semiconductor-Electrolyte Interfaces
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TOTAL DOCUMENTS

H-INDEX

Published By Princeton University Press

Front Matter

Introduction

Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte Interfaces:

Semiconductor-Electrolyte Interface:

Technique of FESE Method and Some Possibilities for Its Technological Applications

Table of Contents

Field Effect in Semiconductor-Electrolyte Interfaces on Nonequilibrium Depletion of Free Charge Carriers from Semiconductor

Application of Field Effect in Semiconductor-Electrolyte Interfaces for Studies of Surface Charge Layer Characteristics of Semiconductors and Semimetals

Size Quantization in the Semiconductor-Electrolyte System

Conclusion

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Field Effect in Semiconductor-Electrolyte InterfacesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Princeton University Press

Front Matter

Introduction

Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte Interfaces:

Semiconductor-Electrolyte Interface:

Technique of FESE Method and Some Possibilities for Its Technological Applications

Table of Contents

Field Effect in Semiconductor-Electrolyte Interfaces on Nonequilibrium Depletion of Free Charge Carriers from Semiconductor

Application of Field Effect in Semiconductor-Electrolyte Interfaces for Studies of Surface Charge Layer Characteristics of Semiconductors and Semimetals

Size Quantization in the Semiconductor-Electrolyte System

Conclusion

Field Effect in Semiconductor-Electrolyte Interfaces
Latest Publications