GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997
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Resonant tunneling circuit technology: has it arrived?

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628251 ◽

2002 ◽

Cited By ~ 15

Author(s):

A. Seabaugh ◽

B. Brar ◽

T. Broekaert ◽

G. Frazier ◽

F. Morris ◽

...

Keyword(s):

Resonant Tunneling ◽

Circuit Technology

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5 GHz ΣΔ analog-to-digital converter with polarity alternating feedback comparator

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628245 ◽

2002 ◽

Author(s):

T. Miyashita ◽

A. Olmos ◽

M. Nihei ◽

Y. Watanabe

Keyword(s):

Analog To Digital Converter ◽

Digital Converter ◽

Analog To Digital ◽

5 Ghz

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An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628265 ◽

2002 ◽

Cited By ~ 13

Author(s):

T. Otsuji ◽

K. Murata ◽

T. Enoki ◽

Y. Umeda

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A 5.5 GHz fractional frequency-synthesizer IC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628280 ◽

2002 ◽

Author(s):

C. Diorio ◽

T. Humes ◽

H. Notthoff ◽

G. Chao ◽

A. Lai ◽

...

Keyword(s):

Frequency Synthesizer ◽

Fractional Frequency

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A 1.4 watt Q-band GaAs PHEMT MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628287 ◽

2002 ◽

Cited By ~ 5

Author(s):

S.J. Nash ◽

A. Platzker ◽

R. Wohlert ◽

C. Liss

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A low distortion and high efficiency HBT MMIC power amplifier with a novel linearization technique for π/4 DPSK modulation

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628234 ◽

2002 ◽

Author(s):

T. Yoshimasu ◽

M. Akagi ◽

N. Tanba ◽

S. Hara

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Linearization Technique ◽

Low Distortion

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A InP DHBT technology for high bit-rate optical communications circuits

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628273 ◽

2002 ◽

Cited By ~ 5

Author(s):

J. Godin ◽

P. Andre ◽

J.L. Benchimol ◽

P. Desrousseaux ◽

A.M. Duchenois ◽

...

Keyword(s):

Optical Communications ◽

Bit Rate ◽

High Bit Rate

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High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628238 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Kanda ◽

S. Kodama ◽

T. Furuta ◽

T. Nittono ◽

T. Ishibashi ◽

...

Keyword(s):

High Performance ◽

Layered Oxide

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III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628229 ◽

2002 ◽

Cited By ~ 2

Author(s):

F. Ren ◽

M. Hong ◽

J.M. Kuo ◽

W.S. Hobson ◽

J.R. Lothian ◽

...

Keyword(s):

Gate Dielectric ◽

Compound Semiconductor

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Conductance DLTS analysis of the correlation between power slump and gate lag

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 ◽

10.1109/gaas.1997.628262 ◽

2002 ◽

Cited By ~ 6

Author(s):

R.E. Leoni ◽

J.W. Bao ◽

X. Du ◽

M. Shirokov ◽

J.C.M. Hwang

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Resonant tunneling circuit technology: has it arrived?

5 GHz ΣΔ analog-to-digital converter with polarity alternating feedback comparator

An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

A 5.5 GHz fractional frequency-synthesizer IC

A 1.4 watt Q-band GaAs PHEMT MMIC

A low distortion and high efficiency HBT MMIC power amplifier with a novel linearization technique for π/4 DPSK modulation

A InP DHBT technology for high bit-rate optical communications circuits

High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs

III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Conductance DLTS analysis of the correlation between power slump and gate lag

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997
Latest Publications