2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications

TOTAL DOCUMENTS

121

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H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781467378581, 9781467378604

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Change in electronic properties of carbon nanotubes caused by local distortion under axial compressive strain

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292265 ◽

2015 ◽

Author(s):

Ken Suzuki ◽

Masato Ohnishi ◽

Hideo MIura

Keyword(s):

Carbon Nanotubes ◽

Electronic Properties ◽

Compressive Strain ◽

Local Distortion

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Electrical characteristic of InGaAs multiple-gate MOSFET devices

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292333 ◽

2015 ◽

Cited By ~ 1

Author(s):

Cheng-Hao Huang ◽

Yiming Li

Keyword(s):

Electrical Characteristic

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Full-zone k · p parametrization for III-As materials

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292250 ◽

2015 ◽

Cited By ~ 1

Author(s):

G. Mugny ◽

D. Rideau ◽

F. Triozon ◽

Y.-M. Niquet ◽

C. Kriso ◽

...

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First-principles simulations of nanoscale transistors

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292256 ◽

2015 ◽

Cited By ~ 2

Author(s):

Anders Blom ◽

Umberto Martinez Pozzoni ◽

Troels Markussen ◽

Kurt Stokbro

Keyword(s):

First Principles ◽

Nanoscale Transistors

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Intrinsic and extrinsic stability of Ovonic-switching devices

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292352 ◽

2015 ◽

Author(s):

F. Buscemi ◽

E. Piccinini ◽

R. Brunetti ◽

M. Rudan

Keyword(s):

Switching Devices

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Front al

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292242 ◽

2015 ◽

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Critical distance method for predicting the tail part of the threshold voltage distribution

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292339 ◽

2015 ◽

Author(s):

Sungman Rhee ◽

Seongwook Choi ◽

YoungJune Park

Keyword(s):

Threshold Voltage ◽

Critical Distance ◽

Voltage Distribution ◽

Distance Method ◽

Tail Part ◽

Threshold Voltage Distribution

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Computational study of graphene FETs (GFETs) as room-temperature terahertz emitter

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292287 ◽

2015 ◽

Cited By ~ 2

Author(s):

Wenshen Li ◽

Shi Dong ◽

He Wang ◽

Jinyu Zhang ◽

Yan Wang ◽

...

Keyword(s):

Room Temperature ◽

Computational Study

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Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effect

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292357 ◽

2015 ◽

Author(s):

Thomas Windbacher ◽

Alexander Makarov ◽

Viktor Sverdlov ◽

Siegfried Selberherr

Keyword(s):

Hall Effect ◽

Spin Hall Effect ◽

Flip Flop

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Author index

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292365 ◽

2015 ◽

Download Full-text

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Change in electronic properties of carbon nanotubes caused by local distortion under axial compressive strain

Electrical characteristic of InGaAs multiple-gate MOSFET devices

Full-zone k · p parametrization for III-As materials

First-principles simulations of nanoscale transistors

Intrinsic and extrinsic stability of Ovonic-switching devices

Front al

Critical distance method for predicting the tail part of the threshold voltage distribution

Computational study of graphene FETs (GFETs) as room-temperature terahertz emitter

Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effect

Author index

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications