2006 International Workshop on Nano CMOS
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TOTAL DOCUMENTS

33

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2

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Published By IEEE

9781424406036

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

NanoCMOS devices at the end and beyond the roadmap

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570973 ◽

2006 ◽

Cited By ~ 1

Author(s):

S. Deleonibus ◽

B. De Salvo ◽

L. Clavelier ◽

T. Ernst ◽

O. Faynot ◽

...

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32nm technology node Double-Gate SOI MOSFET using SiO2 gate stacks

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570975 ◽

2006 ◽

Cited By ~ 1

Author(s):

Enrico Sangiorgi ◽

Nicola Barin ◽

Marco Braccioli ◽

Claudio Fiegna

Keyword(s):

Double Gate ◽

Gate Stacks ◽

Soi Mosfet ◽

Technology Node

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High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570980 ◽

2006 ◽

Cited By ~ 2

Author(s):

Kenji Kimura ◽

Zhao Ming ◽

Kaoru Nakajima ◽

Motofumi Suzuki

Keyword(s):

High Resolution ◽

Rutherford Backscattering ◽

Rutherford Backscattering Spectroscopy

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Length, width and thickness effects in SOI transistors

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570998 ◽

2006 ◽

Author(s):

Sorin Cristoloveanu

Keyword(s):

Length Width

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Characterization of plasma doped shallow junction

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4571000 ◽

2006 ◽

Author(s):

Yuichiro Sasaki ◽

Cheng Guo Jin ◽

Bunji Mizuno

Keyword(s):

Shallow Junction

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Narrowing the field of high-k gate dielectrics: intrinsic electronically-active bonding defects in nanocrystalline transition metal oxides

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570987 ◽

2006 ◽

Cited By ~ 1

Author(s):

Gerald Lucovsky

Keyword(s):

Transition Metal ◽

Metal Oxides ◽

Transition Metal Oxides ◽

Gate Dielectrics ◽

High K

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2006 international workshop on Nano CMOS proceedings

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570969 ◽

2006 ◽

Keyword(s):

International Workshop

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Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570977 ◽

2006 ◽

Cited By ~ 1

Author(s):

Toshiro Hiramoto ◽

Gen Tsutsui ◽

Masumi Saitoh ◽

Toshiharu Nagumo ◽

Takuya Saraya

Keyword(s):

Thin Body ◽

Double Gate

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CMOS technology-based spiral inductors for RF applications

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570986 ◽

2006 ◽

Cited By ~ 1

Author(s):

Ji Chen ◽

Juin J. Liou

Keyword(s):

Cmos Technology ◽

Spiral Inductors ◽

Rf Applications

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New applications of internal photoemission to determine basic MOS system parameters

2006 International Workshop on Nano CMOS ◽

10.1109/iwnc.2006.4570989 ◽

2006 ◽

Author(s):

Henryk M. Przewlocki

Keyword(s):

Internal Photoemission ◽

System Parameters ◽

New Applications

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