2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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9781509052370

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Applications of gallium nitride in MEMS and acoustic microsystems

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874356 ◽

2017 ◽

Author(s):

Mina Rais-Zadeh ◽

Haoshen Zhu ◽

Azadeh Ansari

Keyword(s):

Gallium Nitride

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1W < 0.9dB IL DC-20GHz T/R switch design with 45nm SOI process

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874370 ◽

2017 ◽

Cited By ~ 3

Author(s):

Chaojiang Li ◽

Greg Freeman ◽

Myra Boenke ◽

Ned Cahoon ◽

Umut Kodak ◽

...

Keyword(s):

Switch Design

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Session list

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874346 ◽

2017 ◽

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A 180-GHz CMOS down-converter MMIC for atmospheric remote sensing applications

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874372 ◽

2017 ◽

Cited By ~ 1

Author(s):

Dristy Parveg ◽

Mikko Varonen ◽

Amirreza Safaripour ◽

Steven Bowers ◽

Tero Tikka ◽

...

Keyword(s):

Remote Sensing ◽

Sensing Applications ◽

Atmospheric Remote Sensing ◽

Remote Sensing Applications

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A 28 Gb/s 3-V optical driver with high efficiency in a complementary SiGe:C BiCMOS technology

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874360 ◽

2017 ◽

Cited By ~ 1

Author(s):

P. Rito ◽

I. Garcia Lopez ◽

B. Heinemann ◽

A. Awny ◽

A. C. Ulusoy ◽

...

Keyword(s):

High Efficiency ◽

Bicmos Technology

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Absolute mm-wave power sensor using a switching quad output stage

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874365 ◽

2017 ◽

Cited By ~ 1

Author(s):

Jonas Wursthorn ◽

Herbert Knapp ◽

Jidan Al-Eryani ◽

Klaus Aufinger ◽

Linus Maurer

Keyword(s):

Wave Power ◽

Output Stage ◽

Power Sensor

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A fully differential 100 – 140 GHz frequency quadrupler in a 130 nm SiGe:C technology for MIMO radar applications using the bootstrapped Gilbert-Cell doubler topology

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874364 ◽

2017 ◽

Cited By ~ 10

Author(s):

Simon Kueppers ◽

Klaus Aufinger ◽

Nils Pohl

Keyword(s):

Mimo Radar ◽

Fully Differential ◽

Radar Applications

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A 28-nm CMOS 76−81-GHz power amplifier for Automotive radar applications

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874378 ◽

2017 ◽

Cited By ~ 1

Author(s):

Nader Rohani ◽

Jing Zhang ◽

Jaeyoung Lee ◽

Jian Bai

Keyword(s):

Power Amplifier ◽

Automotive Radar ◽

Radar Applications ◽

28 Nm

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A 15GHz 4-channel transmit/receive RF core-chip for high SHF wide-band massive MIMO in 5G

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874387 ◽

2017 ◽

Cited By ~ 4

Author(s):

Koji Tsutsumi ◽

Wataru Yamamoto ◽

Takaya Maruyama ◽

Takanobu Fujiwara ◽

Ichiro Somada ◽

...

Keyword(s):

Massive Mimo ◽

Wide Band

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A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2017.7874379 ◽

2017 ◽

Cited By ~ 8

Author(s):

Cuilin Chen ◽

Xiao Xu ◽

Xin Yang ◽

Tsuyoshi Sugiura ◽

Toshihiko Yoshimasu

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Sige Bicmos

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2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Applications of gallium nitride in MEMS and acoustic microsystems

1W < 0.9dB IL DC-20GHz T/R switch design with 45nm SOI process

Session list

A 180-GHz CMOS down-converter MMIC for atmospheric remote sensing applications

A 28 Gb/s 3-V optical driver with high efficiency in a complementary SiGe:C BiCMOS technology

Absolute mm-wave power sensor using a switching quad output stage

A fully differential 100 – 140 GHz frequency quadrupler in a 130 nm SiGe:C technology for MIMO radar applications using the bootstrapped Gilbert-Cell doubler topology

A 28-nm CMOS 76−81-GHz power amplifier for Automotive radar applications

A 15GHz 4-channel transmit/receive RF core-chip for high SHF wide-band massive MIMO in 5G

A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Latest Publications