2008 9th International Conference on Ultimate Integration of Silicon
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Published By IEEE

9781424417292

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Anomalous Ge diffusion effects during Ge-condensation

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527175 ◽

2008 ◽

Author(s):

C.S. Beer ◽

T.E. Whall ◽

R.J.H. Morris ◽

E.H.C. Parker ◽

D.R. Leadley

Keyword(s):

Diffusion Effects

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Channel backscattering characteristics of high performance germanium pMOSFETs

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527129 ◽

2008 ◽

Cited By ~ 3

Author(s):

A. Dobbie ◽

B. De Jaeger ◽

M. Meuris ◽

T.E. Whall ◽

E.H.C. Parker ◽

...

Keyword(s):

High Performance

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Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of non thermal carrier distributions

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527155 ◽

2008 ◽

Author(s):

R. Clerc ◽

P. Palestri ◽

L. Selmi ◽

G. Ghibaudo

Keyword(s):

Back Scattering

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Low-voltage scaling limitations for nano-scale CMOS LSIs

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527128 ◽

2008 ◽

Cited By ~ 4

Author(s):

Kiyoo Itoh

Keyword(s):

Low Voltage ◽

Voltage Scaling ◽

Nano Scale

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Variability in SOI Schottky barrier MOSFETs

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527134 ◽

2008 ◽

Cited By ~ 1

Author(s):

S.F. Feste ◽

M. Zhang ◽

J. Knoch ◽

S.-L. Zhang ◽

S. Mantl

Keyword(s):

Schottky Barrier

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Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527151 ◽

2008 ◽

Cited By ~ 2

Author(s):

S. Monaghan ◽

P. K. Hurley ◽

K. Cherkaoui ◽

M.A. Negara ◽

A. Schenk

Keyword(s):

Electrical Characterization ◽

Physical Parameters ◽

Gate Stacks

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Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527167 ◽

2008 ◽

Author(s):

Z. J. Qiu ◽

Z. Zhang ◽

J. Olsson ◽

J. Lu ◽

P.-E. Hellstrom ◽

...

Keyword(s):

Schottky Barrier

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Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527172 ◽

2008 ◽

Cited By ~ 8

Author(s):

B. Rajasekharan ◽

C. Salm ◽

R.J.E. Hueting ◽

T. Hoang ◽

J. Schmitz

Keyword(s):

Transport Properties ◽

Scaling Effects ◽

Dimensional Scaling

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A model for MOS gate stack quality evaluation based on the gate current 1/f noise

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527159 ◽

2008 ◽

Cited By ~ 13

Author(s):

P. Magnone ◽

F. Crupi ◽

G. Iannaccone ◽

G. Giusi ◽

C. Pace ◽

...

Keyword(s):

Quality Evaluation ◽

Gate Stack ◽

Gate Current ◽

Mos Gate

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A new Multi Subband Monte Carlo simulator for nano p-MOSFETs

2008 9th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2008.4527142 ◽

2008 ◽

Cited By ~ 5

Author(s):

M. De Michielis ◽

D. Esseni ◽

P. Palestri ◽

L. Selmi

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulator

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2008 9th International Conference on Ultimate Integration of SiliconLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Anomalous Ge diffusion effects during Ge-condensation

Channel backscattering characteristics of high performance germanium pMOSFETs

Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of non thermal carrier distributions

Low-voltage scaling limitations for nano-scale CMOS LSIs

Variability in SOI Schottky barrier MOSFETs

Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI

Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

A model for MOS gate stack quality evaluation based on the gate current 1/f noise

A new Multi Subband Monte Carlo simulator for nano p-MOSFETs

2008 9th International Conference on Ultimate Integration of Silicon
Latest Publications