Reliability Wearout Mechanisms in Advanced CMOS Technologies
Latest Publications

TOTAL DOCUMENTS

9

(FIVE YEARS 0)

H-INDEX

1

(FIVE YEARS 0)

Published By John Wiley & Sons, Inc.

9780470455265, 9780471731726

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Dielectric Characterization and Reliability Methodology

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch2 ◽

2009 ◽

pp. 71-208

Keyword(s):

Dielectric Characterization

Download Full-text

Hot Carriers

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch5 ◽

2009 ◽

pp. 441-516

Keyword(s):

Hot Carriers

Download Full-text

Electromigration

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch7 ◽

2009 ◽

pp. 565-618 ◽

Cited By ~ 1

Download Full-text

Index

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.index ◽

2009 ◽

pp. 619-624

Download Full-text

Negative Bias Temperature Instabilities in pMOSFET Devices

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch4 ◽

2009 ◽

pp. 331-439

Keyword(s):

Negative Bias ◽

Bias Temperature Instabilities

Download Full-text

Introduction

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch1 ◽

2009 ◽

pp. 1-69 ◽

Cited By ~ 1

Download Full-text

Stress-Induced Voiding

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch6 ◽

2009 ◽

pp. 517-564

Download Full-text

Dielectric Breakdown of Gate Oxides: Physics and Experiments

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.ch3 ◽

2009 ◽

pp. 209-329

Keyword(s):

Dielectric Breakdown ◽

Gate Oxides

Download Full-text

Frontmatter

Reliability Wearout Mechanisms in Advanced CMOS Technologies ◽

10.1002/9780470455265.fmatter ◽

2009 ◽

pp. i-xv

Download Full-text