Heterostructure Epitaxy and Devices
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Published By Springer Netherlands

9789401065931, 9789400902459
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Characteristics of Multiple δ-Doped GaAs Structures

1996 ◽  
pp. 317-320
Author(s):  
T. Lalinský ◽  
J. Šafránková ◽  
Ž Mozolová ◽  
R. Harman ◽  
Š. Németh ◽  
...  

InP/GalnAs MSM Photodetector for Simple Integration in Hemt Circuits

1996 ◽  
pp. 305-308 ◽  
Author(s):  
M. Horstmann ◽  
M. Marso ◽  
K. Schimpf ◽  
H. Hardtdegen ◽  
M. Hollfelder ◽  
...  
Keyword(s):  
Msm Photodetector ◽  
Simple Integration

Design of InGaAs/InAIGaAs/InP RCE PIN Photodiode

1996 ◽  
pp. 301-304 ◽  
Author(s):  
A. Šatka ◽  
D. W. E. Allsopp ◽  
J. Kováč ◽  
F. Uherek ◽  
B. Rheinländer ◽  
...  
Keyword(s):  
Pin Photodiode

Investigation of a GaAs Heterostructure with an AlAs Potential Barrier by DLTS Measurements

1996 ◽  
pp. 95-98
Author(s):  
Ľ Stuchlíková ◽  
L. Harmatha ◽  
J. Kováč ◽  
A. Kováčik ◽  
V. Gottschalch ◽  
...  
Keyword(s):  
Potential Barrier

Real Time Monitoring of Epitaxial Growth

1996 ◽  
pp. 11-20
Author(s):  
Wolfgang Richter ◽  
Kerstin Knorr ◽  
Thomas Zettler ◽  
Martin Zorn
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Real Time Monitoring

Growth and Characterization of INP/GA0.47IN0.53as Deposited by MOMBE

1996 ◽  
pp. 45-48
Author(s):  
M. v. d. Ahe ◽  
CHR. Ungermanns ◽  
H. Hardtdegen ◽  
A. Förster ◽  
B. Setzer ◽  
...  
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