2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)
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Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902424 ◽

2002 ◽

Cited By ~ 3

Author(s):

R. Menozzi ◽

G. Sozzi ◽

E. Tediosi ◽

D. Dieci ◽

C. Lanzieri ◽

...

Keyword(s):

High Field

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Volume and quality impacts on reliability: a new game for GaAs

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902426 ◽

2002 ◽

Cited By ~ 3

Author(s):

W.J. Roesch

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Ka-band InP HEMT MMIC reliability

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902417 ◽

2002 ◽

Cited By ~ 6

Author(s):

B. Paine ◽

R. Wong ◽

A. Schmitz ◽

R. Walden ◽

L. Nguyen ◽

...

Keyword(s):

Ka Band ◽

Inp Hemt

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Reliability of 6 inch 0.4 μm-gate PHEMT device

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902419 ◽

2002 ◽

Cited By ~ 1

Author(s):

Bin Yang ◽

Weiqi Li ◽

E. Casterline

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Production InGaP HBT reliability

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902428 ◽

2002 ◽

Cited By ~ 4

Author(s):

D. Cheskis ◽

A.P. Young ◽

B. Bayraktaroglu

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Determination of InP-based HBT device models at end of life

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902427 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Thomas ◽

C.H. Fields ◽

F. Williams ◽

M. Madhav

Keyword(s):

End Of Life

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A comparative study of thermal measurement techniques currently available to the semiconductor industry

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902423 ◽

2002 ◽

Cited By ~ 2

Author(s):

T.M. Kole

Keyword(s):

Comparative Study ◽

Semiconductor Industry ◽

Measurement Techniques ◽

Thermal Measurement

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Life testing and failure analysis of PHEMT MMICs

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902418 ◽

2002 ◽

Cited By ~ 3

Author(s):

W.T. Anderson ◽

J.A. Roussos ◽

J.A. Mittereder

Keyword(s):

Failure Analysis ◽

Life Testing

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Location of defective cells in HBT power amplifier arrays using IR emission microscopy

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902429 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Dai ◽

P. Canfield

Keyword(s):

Power Amplifier ◽

Emission Microscopy ◽

Ir Emission

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The reliability of short length GaAs bulk resistors

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) ◽

10.1109/gaasrw.2000.902422 ◽

2002 ◽

Author(s):

E. Sabin ◽

J. Scarpulla ◽

Yeong-Chang Chou

Keyword(s):

Short Length

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2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?

Volume and quality impacts on reliability: a new game for GaAs

Ka-band InP HEMT MMIC reliability

Reliability of 6 inch 0.4 μm-gate PHEMT device

Production InGaP HBT reliability

Determination of InP-based HBT device models at end of life

A comparative study of thermal measurement techniques currently available to the semiconductor industry

Life testing and failure analysis of PHEMT MMICs

Location of defective cells in HBT power amplifier arrays using IR emission microscopy

The reliability of short length GaAs bulk resistors

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)
Latest Publications