2006 21st IEEE Non-Volatile Semiconductor Memory Workshop
Latest Publications

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Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Nonvolatile SRAM based on Phase Change

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629510 ◽

2006 ◽

Cited By ~ 20

Author(s):

M. Takata ◽

K. Nakayama ◽

T. Izumi ◽

T. Shinmura ◽

J. Akita ◽

...

Keyword(s):

Phase Change

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Reliability and Qualification of a Floating Gate Memory Manufactured in a Generic Logic Process for RFID Applications

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629486 ◽

2006 ◽

Author(s):

Yanjun Ma ◽

A. Pesavento ◽

Hoc Nguyen ◽

Haibo Li ◽

R. Paulsen

Keyword(s):

Floating Gate ◽

Floating Gate Memory ◽

Logic Process ◽

Rfid Applications

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Generalized Phase Change Memory Scaling Rule Analysis

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629509 ◽

2006 ◽

Author(s):

SangBum Kim ◽

H.-S.P. Wong

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Rule Analysis ◽

Memory Scaling ◽

Change Memory ◽

Scaling Rule

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Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629499 ◽

2006 ◽

Cited By ~ 3

Author(s):

H. Sunamura ◽

K. Masuzaki ◽

M. Terai ◽

S. Kotsuji ◽

T. Onizawa ◽

...

Keyword(s):

Threshold Voltage ◽

Charge Trap ◽

Plasma Nitridation ◽

Non Volatile Memory ◽

Volatile Memory

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Future Outlook of NAND Flash Technology for 40nm Node and Beyond

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629474 ◽

2006 ◽

Cited By ~ 41

Author(s):

Kinam Kim ◽

Jungdal Choi

Keyword(s):

Nand Flash ◽

Future Outlook

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Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629507 ◽

2006 ◽

Cited By ~ 1

Author(s):

Hyunjun Sim ◽

Dong-jun Seong ◽

Man Chang ◽

Hyunsang Hwang

Keyword(s):

Single Crystal ◽

Resistance Switching ◽

Schottky Junction ◽

Switching Characteristics

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A Novel SONOS Memory with HfSiON/Si3N4/HfSiON Stack for Improved Retention

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629489 ◽

2006 ◽

Cited By ~ 3

Author(s):

R. van Schaijk ◽

M. van Duuren ◽

N. Akil ◽

A. Huerta ◽

S. Beckx ◽

...

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Quantitative Model for Data Retention Loss at NROM Nitride Charge Trapping Devices after Program / Erase Cycling

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629503 ◽

2006 ◽

Cited By ~ 9

Author(s):

G. Tempel ◽

R. Hagenbeck ◽

M. Strassburg

Keyword(s):

Charge Trapping ◽

Quantitative Model ◽

Data Retention ◽

Retention Loss ◽

Trapping Devices

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Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629491 ◽

2006 ◽

Author(s):

Chang-Hyun Lee ◽

Changseok Kang ◽

Jaesung Sim ◽

Jang-Sik Lee ◽

Juhyung kim ◽

...

Keyword(s):

Flash Memory ◽

Charge Trapping ◽

Memory Cell ◽

Nand Flash ◽

Nand Flash Memory ◽

Charge Trapping Memory

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NROM Window Sensing for 2 and 4-bits per cell Products

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/.2006.1629498 ◽

2006 ◽

Cited By ~ 2

Author(s):

A. Shappir ◽

E. Lusky ◽

G. Cohen ◽

B. Eitan

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2006 21st IEEE Non-Volatile Semiconductor Memory WorkshopLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Nonvolatile SRAM based on Phase Change

Reliability and Qualification of a Floating Gate Memory Manufactured in a Generic Logic Process for RFID Applications

Generalized Phase Change Memory Scaling Rule Analysis

Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

Future Outlook of NAND Flash Technology for 40nm Node and Beyond

Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction

A Novel SONOS Memory with HfSiON/Si3N4/HfSiON Stack for Improved Retention

Quantitative Model for Data Retention Loss at NROM Nitride Charge Trapping Devices after Program / Erase Cycling

Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

NROM Window Sensing for 2 and 4-bits per cell Products

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop
Latest Publications