c2f6 plasmas
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Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas

Korean Journal of Chemical Engineering ◽

10.1007/s11814-019-0449-x ◽

2020 ◽

Vol 37 (2) ◽

pp. 374-379 ◽

Cited By ~ 1

Author(s):

Jun-Hyun Kim ◽

Chang-Koo Kim

Keyword(s):

High Density ◽

Etch Rates ◽

C2f6 Plasmas

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SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations

Thin Solid Films ◽

10.1016/s0040-6090(00)01156-1 ◽

2000 ◽

Vol 374 (2) ◽

pp. 311-325 ◽

Cited By ~ 26

Author(s):

John Feldsien ◽

Doosik Kim ◽

Demetre J Economou

Keyword(s):

Surface Chemistry ◽

Two Dimensional ◽

Inductively Coupled ◽

C2f6 Plasmas ◽

Sio2 Etching

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