Investigating High-Temperature Gaseous and Salt Corrosion Resistance of a Heat-Resistant Intermetallic Titanium Alloy VTI-4 (ВТИ-4)

We investigated high-temperature gaseous and salt corrosion resistance of heat-resistant intermetallic titanium VTI-4 (ВТИ-4) alloy samples by conducting accelerated cyclic laboratory testing in air, in a NaCl environment, and in a mixture of Na2SO4 and NaCl. While testing the VTI-4 (ВТИ-4) alloy in air, we observed corrosion of a chemical nature and pseudo-parabolic specific mass variation kinetics. After cyclic testing in a NaCl environment at 700 °C the surface of the VTI-4 (ВТИ-4) alloy was covered by a film consisting of two layers: a mixture of Al2O3 and (Ti, Nb)O2 oxides, and a (Ti, Nb)O2 layer. In a NaCl + Na2SO4 environment at temperatures of 650 and 700 °C a liquid ion conductor film may manifest on the alloy surface alongside the oxides, while corrosion becomes predominantly electrochemical, of the pitting type. Globular orthorhombic phase particles initiate the pitting process. We detected that the pit depth in the alloy after testing in a Na2SO4 + NaCl environment at 650 and 700 °C is twice that obtained in NaCl at 700 °C. At the temperatures of 650 °C in Na2SO4 + NaCl and 700 °C in NaCl and Na2SO4 + NaCl environments the specific mass variation becomes negative, which is due to the oxide film peeling and shedding as temperatures change. The corrosion rate for the VTI-4 (ВТИ-4) alloy in the Na2SO4 + NaCl environment at 650 °C is lower than those for the nickel alloys VV751P (ВВ751П) and VZh175-ID (ВЖ175-ИД)

Development of MCM-D Technology with Photosensitive Benzocyclobutene

This paper evaluates and compares the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) with the non-photosensitive BCB to fabricate passive devices. The polymer was used to isolate the metal/interconnection layers and also as the dielectric for the capacitors. Ni-P/Au was used as the conductor film and Ta2N as the resistor film. The resistors’ sheet resistance was measured with both transfer length method (TLM) and direct measurement while the measurements of the capacitors and inductors required the use of a Vector Network Analyzer (VNA) and some mathematical algorithms.

Nanophotonics using a subwavelength aperture in a metal film

This review focuses on the optical theory and applications of a single subwavelength aperture in a metal film. We begin with Bethe’s aperture theory for the optical transmission through a subwavelength aperture in a perfect electric conductor film and extend the discussion to apertures in real metals of finite thickness and to apertures with different shapes. Extraordinary optical transmission (EOT) is reviewed, particularly for an aperture in a transverse waveguide screen and for waveguide EOT with applications to aperture near-field probes. We overview applications of single subwavelength nanoapertures to refractive index sensing, single molecule fluorescence detection, Raman spectroscopy and optical trapping of dielectric nanoparticles, including biological matter. Finally, we discuss the potential of combining these many different capabilities to create greater functionality with a single aperture.

Silicide Film Formation in the Ta/Ti/Si System by RF Induction Heating

Silicidation of Ta-Ti-Si film on Si (111) and Si (100) substrates was investigated by a new radio frequency (RF) heating in order to evaluate the progress of reaction and establish whether the substrate orientation influence on the rate of reaction prevails. Substrate orientation was observed notwithstanding the high temperatures applied and the very short duration of RF. It was observed that while the reaction on Si (111) goes to completion, on Si (100) substrates under the same conditions intermediate phases remained. A qualitative analysis of the RF treatment of a conductor film on the silicon substrate is presented. It is done for the first time using the mathematical approach of the heat explosion theory. According to the analysis the specimens might experience either heating at constant temperature or by a sudden temperature increase. The relation between the parameters for the heat explosion regime is presented in simple analytical form. Measurable quantities such as sheet resistance and the magnetic field applied determine the stage of the process. The value of the resulting sheet resistance indicates whether the progress of the RF occurred by heating in the slow growth temperature regime or in the heat explosion stage where reactions of a conductor film occur within a fraction of a second.