A new binary phase in the tin monoselenide system: chemical epitaxy of orthorhombic gamma-SnSe thin films

A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic...

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

High adhesion tin monoselenide SnSe layers with a thickness of up to 200 ± 10 nm have been prepared by hydrochemical deposition from a trilonate reaction mixture. It was revealed by the X-ray diffraction method that the synthesized films crystallize in the orthorhombic system (S. G. Pnma). The presence of a significant amount of oxygen in the surface layers of the films is explained by partial oxidation of the samples with the formation of the SnO2 phase. The results of ion etching to a depth of 18 nm showed a sharp decrease in the oxygen content with depth and actual correspondence of the elemental composition to SnSe. According to the results of optical studies, the band gap was found to be 1.69 eV for direct type of transitions, respectively. The synthesized SnSe layers have a hole-type conductivity typical of this material.

Layered tin monoselenide as advanced photothermal conversion materials for efficient solar energy-driven water evaporation

A SnSe@NF photothermal device was fabricated via pulsed-laser deposition for highly efficient solar-enabled water evaporation.

Eco-friendly synthesis of SnSe nanoparticles: effect of reducing agents on the reactivity of a Se-precursor and phase formation of SnSe NPs

Tin monoselenide (SnSe) nanoparticles (NPs) have great potential to replace the conventional absorbers used in the fabrication of thin film solar cells.

Growth and Electrical Characterizations of Sn0.3Se0.7 Crystals Grown by Direct Vapour Transport Technique

Tin monoselenide (Sn0.3Se0.7) crystals have been grown by direct vapour transport technique. These crystals were found exhibit orthorhombic structure with space group D2h16 (Pcmn). The electrical measurements such as thermoelectric power and resistivity were carried out at high temperature on these as-grown crystals. The parameters like See back co-efficient, Fermi energy and scattering co-efficient were calculated from experimental data of TEP. The primary studies show the semiconducting behaviour of these crystals. Activation energy was also calculated by employing Arrhenius equation for grown samples. These layered materials, due to different kinds of interactions exhibits anisotropic crystalline structure and this lead to an anisotropy in electrical transport. Anisotropy seems to be decrease with temperature for all grown crystals. A detailed study about electrical transport and anisotropy in all such crystals will be presented at the time of presentation.