Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond

To improve the performance characteristics of power and high-frequency electronics, wide bandgap semiconductors are now widely used. This paper presents consideration of features arising during exploration of electronic characteristics of wide bandgap materials. We use the admittance spectroscopy method for analyzing free carrier concentration and boron-impurity activation energy in semiconductor diamond. The special aspect that should be taken into account while studying wide bandgap materials is incomplete ionization of impurity. In this work we adjust the experimental conditions, basing on the previous experience, in particular reduce signal/noise ratio and reckon with heat capacity of the samples and substrate. As a result we obtained high quality conductance spectra and activation energy of boron impurity in low-doped diamond.

Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System

In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.