For the first time, particle-induced X-ray emission (PIXE) spectra were obtained using TlBr detectors. The TlBr detector was fabricated from a crystal grown with material purified by the zone purification. Its active volume was 1.5 mm × 1.5 mm × 3.1 mm, and it exhibited an energy resolution of a 6.2 keV full-width at half-maximum (FWHM) for 59.5 keV at room temperature. The detector was installed into a PIXE system at Aomori Prefecture Quantum Science Center. A Pb plate target in the PIXE chamber was irradiated with a 20 MeV proton beam, and X-ray peaks for Pb K[Formula: see text] and K[Formula: see text] were successfully detected by the TlBr detector at room temperature.
The paper presents the results of studies obtained with the development of the technology of electron-beam crucible impregnation of metallurgical silicon. It is shown that refining of silicon from background and dopant impurities in electron-beam crucible-free zone melting occurs by zone purification during melting and as a result of evaporation of impurities from the sample surface. The mathematical model and computational experiment were been performed to determine the temperature gradient at different rates of zone melting. It was found the diapason of temperature gradients, which provides the columnar structure of crystallites and the purification of the samplesdue the melting with the zone recrystallization procedure. The level of the resistivity of the ingots increases at the end.
The aim of this work is to study the new method of direct synthesis of lead and iodine as the input material of PbI2. This method has not been studied for this material till now, and seems to be one of the new methods for preparation of the input material. The photoluminescence measurement and measurement of resistivity has been done and compared with the measurements done by precipitation and zone purification.
Investigation of the Effect of the Electron-Beam Crucible Zone Melting of Metallurgical Silicon on Refining and Structure Formation of Ingots