lu doping
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Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics

2020 ◽  
Vol 31 (10) ◽  
pp. 7731-7741 ◽  
Author(s):  
Shuaifei Mao ◽  
Nengneng Luo ◽  
Kai Han ◽  
Qin Feng ◽  
Xiyong Chen ◽  
...  
Keyword(s):  
Energy Storage ◽  
Electrical Properties ◽  
Storage Performance ◽  
Lu Doping

Handling magnetic and structural properties of EuMnO3 thin films by the combined effect of Lu doping and substrate strain

2018 ◽  
Vol 762 ◽  
pp. 319-325 ◽  
Author(s):  
Y. Romaguera-Barcelay ◽  
F.G. Figueiras ◽  
J. Agostinho Moreira ◽  
J. Pérez-de-la-Cruz ◽  
P.B. Tavares ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Combined Effect ◽  
Substrate Strain ◽  
Lu Doping

Effects of Ln3+ (Ln=Ce, Pr, Tb and Lu) doping on the persistent luminescence properties BaMg2(PO4)2:Eu2+ phosphor

2015 ◽  
Vol 41 (10) ◽  
pp. 14998-15004 ◽  
Author(s):  
Guifang Ju ◽  
Yihua Hu ◽  
Li Chen ◽  
Zhongfu Yang ◽  
Tao Wang ◽  
...  
Keyword(s):  
Luminescence Properties ◽  
Persistent Luminescence ◽  
Lu Doping

Ferroelectric Properties and Microstructures of Bi4-x LuxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 33-36 ◽  
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Lu Doping

Lu2O3-doped bismuth titanate (Bi4-xLuxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Lu-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Lu doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

The performance of 1329 nm CW and passivelyQ-switched Nd:LGGG laser with low Lu-doping level

2013 ◽  
Vol 10 (5) ◽  
pp. 055005 ◽  
Author(s):  
Z-W Wang ◽  
X-W Fu ◽  
J-L He ◽  
Z-T Jia ◽  
B-T Zhang ◽  
...  
Keyword(s):  
Doping Level ◽  
Lu Doping

The effect of partial Lu doping on magnetic behaviour of YBCO (123) superconductors

2010 ◽  
Vol 495 (1) ◽  
pp. 104-107 ◽  
Author(s):  
Ali Öztürk ◽  
İbrahim Düzgün ◽  
Selahattin Çelebi
Keyword(s):  
Magnetic Behaviour ◽  
Lu Doping

The Lu-doping effect on the emission and the coloration of pure and Ce-doped crystals

2007 ◽  
Vol 42 (4-5) ◽  
pp. 819-822 ◽  
Author(s):  
V. Nesterkina ◽  
N. Shiran ◽  
A. Gektin ◽  
K. Shimamura ◽  
E. Villora
Keyword(s):  
Doping Effect ◽  
Lu Doping
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