Preparation of La0.9SR0.1Ga0.8Mg0.2O3-δ Electrolyte Films Deposited by RF Magnetic Sputtering

La0.9Sr0.1Ga0.8Mg0.2O3-d (LSGM) electrolyte materials were synthesized using solid state reactions. The LSGM material film was deposited by radiofrequency magnetic sputtering on La0.7Sr0.3Cr0.5Mn0.5O3-d (LSCM) substrates. The analysis results show the films did not form but formed some “mountains” when deposited for 4 h. While the depositing time extended to 12 h, a dense and uniform film with perovskite phase was obtained, and the element amounts of the film were closed to those of the LSGM materials.

Effect of Annealing on Structural and Optical Properties of Zr Doped ZnO Film Grown by RF Magnetic Sputtering

Zinc oxide (ZnO) and Zirconium (Zr) doped ZnO nano films have been successfully fabricated by radio frequency (RF) magnetic sputtering. The crystal structure and morphology were investigated by X-ray Diffraction (XRD), Field Emission-Scanning Electron Microscope (FE-SEM) and Transmission Electron Microscope (TEM). As the doped Zr content increases, ZnO nano films show various morphologies. The optical band gap of pure ZnO films increases from 3.27 eV to 3.53 eV with Zr concentration increasing to 9.66 at.%. After annealing, the polycrystalline structure of ZnO changes a little and the energy gap decreases. In addition, the clean and lower doped ZnO films show much lower transmittance.