bismuth doping
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scholarly journals Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

2021 ◽  
Author(s):  
Lijun Zhao ◽  
Mingyuan Wang ◽  
Jian Yang ◽  
Jiabin Hu ◽  
Yuan Zhu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Bismuth Doping

scholarly journals Bismuth Doping Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals

2021 ◽  
Vol 12 (11) ◽  
pp. 2749-2755
Author(s):  
Erin Jedlicka ◽  
Jian Wang ◽  
Joshua Mutch ◽  
Young-Kwang Jung ◽  
Preston Went ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Single Crystals ◽  
Structural Phase ◽  
Structural Phase Transitions ◽  
Bismuth Doping

Non‐Rare‐Earth UVC Persistent Phosphors Enabled by Bismuth Doping

2021 ◽  
Vol 9 (8) ◽  
pp. 2002065
Author(s):  
Qi Liu ◽  
Zhao‐Yang Feng ◽  
Hong Li ◽  
Qing Zhao ◽  
Naoto Shirahata ◽  
...  
Keyword(s):  
Rare Earth ◽  
Bismuth Doping

scholarly journals Synthesis and Characterization of Thin Nanostructured Bismuth Doped Tin Oxide Films and Sensing Studies

2020 ◽  
Vol 12 (3) ◽  
pp. 349-360
Author(s):  
Andrey V. Smirnov ◽  
◽  
Ilya V. Sinev ◽  
Vyacheslav V. Simakov ◽  
Vladimir V. Kolesov ◽  
...  
Keyword(s):  
Tin Dioxide ◽  
Gas Sensing ◽  
Signal Timing ◽  
Acetone Vapor ◽  
Two Phase ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Vapor Sensors ◽  
Bismuth Doping

The tin dioxide (SnO2) films doped with bismuth by means of magnetron sputtering of semiconductor two-phase target and powder BiO2 as source of Bi were produced. The effect of bismuth dope concentration variation on the microstructure, electrophysical and gas-sensing properties was investigated. It has been found, that films consist of crystalline rods with diameter of 21±2 nm and length of 120±10 nm. Bismuth doping provided decrease in signal timing drift of acetone sensor in analyzed probe. Sensitivity to acetone vapor of the sample derived from targets with 0.01% bismuth oxide concentration increase almost by 10 times (up to 850) in comparison with undoped film at 300°С. Based on the obtained experimental data the mechanism of bismuth dope influence on electrical and gas-sensing properties of produced tin dioxide films was evaluated. Obtained results have shown capability the use of bismuth doped dioxide tin films for development of saturated acetone vapor sensors.

Effect of bismuth doping on structural and electrical properties of 0.9(BaZr0.2Ti0.8O3)–0.1(Ba0.7Ca0.3TiO3) ceramic

2020 ◽  
Vol 46 (14) ◽  
pp. 22592-22605 ◽  
Author(s):  
N. Othmani ◽  
A. Amouri ◽  
F. Benabdallah ◽  
Z. Sassi ◽  
L. Seveyrat ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Bismuth Doping

Effect of bismuth doping on the structural, magnetic, electrical, and thermopower behavior of lanthanum silver manganites

2020 ◽  
Vol 31 (18) ◽  
pp. 15931-15942
Author(s):  
Y. Kalyana Lakshmi ◽  
K. V. Siva Kumar ◽  
V. Ganesan ◽  
P. Venugopal Reddy
Keyword(s):  
Bismuth Doping
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