INFLUENCE OF DENSITY, OCCUPANCY AND LOCATION OF ELECTRON TRAPS ON SHOT NOISE IN NONDEGENERATE QUASIBALLISTIC TRANSPORT

An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used to study the influence of the density, occupancy and location of electrons traps on the current fluctuations in nondegenerate quasiballistic structures. Transport and noise are found to depend significantly on the density and location of the traps. In particular, the presence of traps increases the noise level as compared with the purely ballistic case. The nonuniformity of the trap occupancy profiles along the active region of the structures affects markedly (specially for low trap densities) the dependence of shot noise on the applied voltage. The location of the traps with respect to the potential minimum appearing in the structures because of the presence of space charge determines their influence on the noise level, fact which can be of help to identify the trap position.