Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.

Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H-) based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

Oxygen-Effect in Annealing of Recoil Damage in Cobalt Chelates-Tris-Acetyl-Acetone Co(III) and Bis-Salicylaldehyde Triethylenetetramine Co(III) Chloride

SummaryA marked 'oxygen effect' is observed for several cobalt complexes in thermal annealing. Kinetic data are reported for recoil damage, afterIt is suggested that during an isothermal annealing run electrons are released from variable depth traps, and interact with the metastable species (damage centres) formed by virtue of interaction of recoil cobalt atom with a chelate molecule. The adsorbed oxygen on the surface acts as deep electron trap and suppresses annealing. Once it is displaced by N