Production and Monitoring of Neutron Flux by Activation Detectors

The neutron generation technique was tested on the microtron M-10 with an output electron beam of 8.7 MeV. Given the low energy that the microtron can provide to electrons, the bremsstrahlung induced photonuclear reaction 9Be (γ, n), which has a low threshold, was chosen for neutron generation. Cobalt and indium targets were tested as activation detectors to estimate the neutron flux density. In the cobalt target, the isomeric state of 60mCo with an energy of 58.6 keV and a half-life of 10.5 minutes is well activated. Two well-known additional gamma lines of standard cobalt source permit to clarify the absolute value of the neutron flux. The activated indium target has four gamma lines bound to the 116mIn isomer β- decaying with the half-life of 54.4 minutes, what is convenient for measurement of gamma spectrum. Despite the low energy of the output electron beam, at a beam intensity of 5 μA it is possible to obtain an almost isotropic neutron flux of 107 n/(s∙cm2).

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

In this report, indium nitride (InN) thin films were deposited on kapton polyimide flexible substrate by reactive radio frequency (RF) sputtering method using an indium target in a mixture of Ar and N2gases. The effects of the Ar:N2gas ratio on the properties of the deposited InN thin films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and energy dispersive (EDX) spectroscopy. The XRD revealed that the deposited films composed of polycrystalline wurtzite InN. The FESEM and AFM surface morphologies showed smooth and uniform surface of gas ratio at 60:40 compare to others gas ratio. Overall, the characteristics of the InN thin films were effectively improved with combination the N2:Ar gas ration at 60:40. The results showed that the gas ratio plays an important role in improving the properties of the InN thin films.

Characterization of InN nanoparticles prepared by laser as photodetector

Indium nitride (InN) nanoparticles (NPs) are a potentially important material for optoelectronic and high speed electronic devices. Using 1064 nm Nd:YAG laser, InN NPs suspension has been prepared by laser ablation of indium target submerged under ammonium hydroxide. FTIR determined the presence of In=N at 1114.8 cm[Formula: see text] symmetric stretching mode, and In–N bending vibration mode appears at 445.5 cm[Formula: see text]. X-ray diffraction (XRD) observed the peaks (101), (110), and (220) as a reflection formation cubic InN, with an average size of 2 nm. Scanning electron microscope (SEM) image shows that the NPs have a spherical shape with particle size in the range 2–20 nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378 nm with the band gap energy of 1.2 eV. The current–voltage characteristics of InN/Si heterojunction have a good rectifying property with a spectral responsivity of about 0.797 A/W at 750 nm wavelength.

Laser ablation of an indium target: time-resolved Fourier-transform infrared spectra of In I in the 700–7700 cm−1 range

Laser-induced breakdown spectroscopy (LIBS) in combination with a time-resolved Fourier-transform technique was applied to obtain spectra of In I in the infrared spectral region.

Computer Simulation of Sputtering from Two Component Liquid Metal Targets

ABSTRACTThe sputtering of In and Ga atoms from a “liquid” target composedof gallium coveredby a surface monolayer of indium by incident 5 keV Ar+ ions was simulated using the multiple interaction molecular dynamics technique. Yields, energy distributions, and angular distributions of sputtered atoms were obtained at a temperature above the melting point for the eutectic alloy. Similar information was obtained for a pure gallium and a pure indium target. Our results for layer yield ratios and angular distributions are in good qualitative agreement with Dumke's experimental data for the Ar+, In-Ga system. Absolute yields, however, were found to be sensitive to the detailed nature of the two-body potentials used to describe the atom-atom interactions.