dilute nitride semiconductor Latest Research Papers

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.08rd11 ◽

2018 ◽

Vol 57 (8S3) ◽

pp. 08RD11 ◽

Cited By ~ 5

Author(s):

Yilun He ◽

Naoya Miyashita ◽

Yoshitaka Okada

Keyword(s):

Solar Cells ◽

Deep Level ◽

Dilute Nitride ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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Analysis and Control of Deep-Level Defects in Dilute Nitride Semiconductor GaInNAsSb

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547802 ◽

2018 ◽

Author(s):

Yilun He ◽

Naoya Miyashita ◽

Yoshitaka Okada

Keyword(s):

Deep Level ◽

Dilute Nitride ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor ◽

And Control

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Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

Physical Review B ◽

10.1103/physrevb.83.165202 ◽

2011 ◽

Vol 83 (16) ◽

Cited By ~ 13

Author(s):

A. Kunold ◽

A. Balocchi ◽

F. Zhao ◽

T. Amand ◽

N. Ben Abdallah ◽

...

Keyword(s):

Dilute Nitride ◽

Photo Conductivity ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

10.1117/12.829354 ◽

2009 ◽

Author(s):

M. de la Mare ◽

Q. Zhuang ◽

A. Patanè ◽

S. Dhar ◽

A. Krier

Keyword(s):

Spectral Range ◽

Dilute Nitride ◽

Semiconductor Alloys ◽

Mid Infrared ◽

Infrared Spectral Range ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor ◽

Infrared Spectral

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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

Applied Physics Letters ◽

10.1063/1.3187534 ◽

2009 ◽

Vol 95 (3) ◽

pp. 031110 ◽

Cited By ~ 18

Author(s):

M. de la Mare ◽

Q. Zhuang ◽

A. Krier ◽

A. Patanè ◽

S. Dhar

Keyword(s):

Spectral Range ◽

Dilute Nitride ◽

Semiconductor Alloys ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference ◽

10.1109/cleoe-eqec.2009.5192365 ◽

2009 ◽

Author(s):

C. Buckers ◽

S. W. Koch ◽

A. Thranhardt ◽

J. Hader ◽

J. V. Moloney ◽

...

Keyword(s):

Optical Properties ◽

Dilute Nitride ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor ◽

Microscopic Modeling ◽

Semiconductor Gain

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Vibrational mode shifts as a measure of local strain in the dilute nitride semiconductor alloyGaNxAs1−x

Physical Review B ◽

10.1103/physrevb.79.153201 ◽

2009 ◽

Vol 79 (15) ◽

Cited By ~ 3

Author(s):

J. Buckeridge ◽

A. M. Teweldeberhan ◽

S. Fahy

Keyword(s):

Vibrational Mode ◽

Local Strain ◽

Dilute Nitride ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

Applied Physics Express ◽

10.1143/apex.1.035004 ◽

2008 ◽

Vol 1 ◽

pp. 035004 ◽

Cited By ~ 11

Author(s):

Shudong Wu ◽

Masakazu Kato ◽

Masayuki Uchiyama ◽

Kotaro Higashi ◽

Fumitaro Ishikawa ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gas Flow ◽

Molecular Beam ◽

Dilute Nitride ◽

Nitrogen Gas ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

Surface Science ◽

10.1016/j.susc.2007.06.048 ◽

2007 ◽

Vol 601 (24) ◽

pp. 5800-5802 ◽

Cited By ~ 5

Author(s):

B.F. Usher ◽

T. Warminski ◽

T. Dieing ◽

Kathryn Prince

Keyword(s):

Plasma Source ◽

Dilute Nitride ◽

Mbe Growth ◽

Ecr Plasma ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

New Journal of Physics ◽

10.1088/1367-2630/9/5/140 ◽

2007 ◽

Vol 9 (5) ◽

pp. 140-140 ◽

Cited By ~ 15

Author(s):

J Konttinen ◽

A Härkönen ◽

P Tuomisto ◽

M Guina ◽

J Rautiainen ◽

...

Keyword(s):

High Power ◽

Dilute Nitride ◽

Disk Laser ◽

Semiconductor Disk Laser ◽

Nitride Semiconductor ◽

Dilute Nitride Semiconductor

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dilute nitride semiconductor
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Analysis and Control of Deep-Level Defects in Dilute Nitride Semiconductor GaInNAsSb

Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

Vibrational mode shifts as a measure of local strain in the dilute nitride semiconductor alloyGaNxAs1−x

Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

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dilute nitride semiconductorRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Analysis and Control of Deep-Level Defects in Dilute Nitride Semiconductor GaInNAsSb

Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

Vibrational mode shifts as a measure of local strain in the dilute nitride semiconductor alloyGaNxAs1−x

Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

dilute nitride semiconductor
Recently Published Documents