FORMATION OF MG2SI THIN FILMS ON SI (111) AND THEIR RESEARCH BY EOS AND EELS

The paper presents information on the results of the formation of a thin Mg2Si film on a silicon substrate by solid-phase epitaxy in an ultrahigh-vacuum chamber of the PHI model 590 device. There are a number of difficulties in the formation of magnesium silicide films due to the low condensation coefficient and high vapor pressure. Effective methods for the formation of Mg2Si are currently being sought. As a result of our experiment, a thin film was obtained, which was studied in-situ by the method of electron Auger spectroscopy and spectroscopy of characteristic energy losses by electrons. Analysis of the Auger electron spectrum showed the presence of magnesium and silicon atoms in the composition of the formed film. From the analysis of the EELS spectra, it was found that a thin film of silicide magnesium was formed.

STUDY OF COMPOSITION FILM SYSTEM PB-SE AND CHANGE OF STRUCTURE UNDER TEMPERATURE ACTION

The Pb-Se film systems were obtained by solid-phase synthesis and investigated by Xray diffraction and X-ray photoelectron spectroscopy, electron Auger spectroscopy. It was found that the films are heterogeneous in structure and composition. To study the structural features under the influence of temperature, Raman spectra of samples at temperatures of 300 K and 373 K were investigated.