Secondary Recrystallization Goss Texture Development in a Binary Fe81Ga19 Sheet Induced by Inherent Grain Boundary Mobility

Secondary recrystallization Goss texture was efficiently achieved in rolled, binary Fe81Ga19 alloy sheets without the traditional dependence on inhibitors and the surface energy effect. The development of abnormal grain growth (AGG) of Goss grains was analyzed by quasi-situ electron backscatter diffraction (EBSD). The special primary recrystallization texture with strong {112}–{111}<110> and weak Goss texture provides the inherent pinning effect for normal grain growth by a large number of low angle grain boundaries (<15°) and very high angle grain boundaries (>45°) according to the calculation of misorientation angle distribution. The evolution of grain orientation and grain boundary characteristic indicates that the higher fraction of high energy grain boundaries (20–45°) around primary Goss grains supplies a relative advantage in grain boundary mobility from 950 °C to 1000 °C. The secondary recrystallization in binary Fe81Ga19 alloy is realized in terms of the controllable grain boundary mobility difference between Goss and matrix grains, coupled with the orientation and misorientation angle distribution of adjacent matrix grains.

Evolution of domains and grain boundaries in graphene: a kinetic Monte Carlo simulation

Energy-driven kinetic Monte Carlo simulation of graphene fast annealing process and graphene grain boundary misorientation angle distribution analysis.

Evolution of the Texture on Primary Recrystallization and Grain Growth in Fe-3%Si Steels

Recrystallization texture in grain oriented silicon steel at different annealing temperature is investigated. Normalized x-ray intensities of various orientation components observed in Orientation Distribution Function are used for comparison. The computed CSL boundary distributions about Goss component with annealing condition were calculated. The misorientation angle distribution is also measured in order to find the importance of high-energy boundary with misorientation 20~45° range for the secondary recrystallization of Goss grain. From the analysis of CSL boundary distribution and misorienation angle distribution, the distribution of CSL boundaries does not evidently show any preferred difference between Goss and other texture components. Whereas, the misorientation angle analysis shows that the number of 20°~45° misoriented boundaries is higher around the Goss grains than around other texture components.

Modelling of the Evolution of Dislocation Cell Misorientation under Severe Plastic Deformation

A model describing the evolution of the misorientation angle between dislocation cells with plastic strain is proposed. The model is applied to the case of equal channel angular pressing (ECAP) of copper. In a basic version of the model, the evolution of the average misorientation angle is traced. A way of handling the evolution of the misorientation angle distribution function using a probabilistic description is also outlined.