lattice vacancy
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2017 ◽  
Vol 727 ◽  
pp. 581-587
Author(s):  
Qian Chen ◽  
Kan Chen ◽  
Qing Chen ◽  
Qing Quan Xiao ◽  
Quan Xie

A detailed theoretical study on the influence of lattice vacancy on structural and optical properties of the magnesium silicide Mg2Si has been performed based on the first-principles pseudopotential method. The results show that Mg2Si has changed from indirect band gap semiconductor to direct band gap semiconductor because of Mg vacancy. Compared with the dielectric function, absorption coefficient, refractive index, reflectivity and photon conductivity of Mg2Si, those peaks of Mg15Si8 appear from 0 to 1.8 eV. And the loss function’s biggest peak of Mg15Si8 moves to the direction of high energy.


2014 ◽  
Vol 13 (4) ◽  
pp. 862-871 ◽  
Author(s):  
Dipankar Saha ◽  
Amretashis Sengupta ◽  
Sitangshu Bhattacharya ◽  
Santanu Mahapatra

2000 ◽  
Vol 284-288 ◽  
pp. 1746-1747 ◽  
Author(s):  
Masatsura Igami ◽  
Takeshi Nakanishi ◽  
Tsuneya Ando

1999 ◽  
Vol 68 (10) ◽  
pp. 3146-3149 ◽  
Author(s):  
Masatsura Igami ◽  
Takeshi Nakanishi ◽  
Tsuneya Ando

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