Hydroquinone Sensor Based on Neodymium (Nd) Doped ZnO Hexagonal Nanorods

Herein, we report a simple hydrothermal synthesis and detailed characterizations of Nd-doped ZnO pointed hexagonal nanorods by various techniques such as field emission scanning electron microscopy (FESEM) attached with energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), UV-visible, Fourier transform infrared (FTIR) and Raman-scattering spectroscopy. The morphological studies revealed pointed hexagonal nanorods arranged in flower-shaped morphologies and well-crystalline with the wurtzite hexagonal phase. The Nd-doped ZnO nanorods were used as potential scaffold to fabricate high sensitivity hydroquinone sensor which exhibited sensitivity of ∼7.43 μA·mM–1cm–2 with a linear dynamic range of (LDR) of 0.313 mM–2.5 mM and correlation coefficient (R2) of 0.99671. The detection limit of Nd-doped ZnO pointed hexagonal nanorods based hydroquinone sensor was found to be 0.313 mM.

Recrystallization techniques for the synthesis of ZnO nanorods: an in situ process for carbon doping and enhancing the dispersion concentration of ZnO nanorods

Dispersed ZnO hexagonal nanorods in ethanol solvent and its interfacial behavior in this liquid phase.

NMOF self-templating synthesis of hollow porous metal oxides for enhanced lithium-ion battery anodes

Hollow porous Fe2O3 hexagonal nanorods were fabricated via a facile approach using MOFs as the precursors and sacrificial templates.

Influence of Irradiation Time on Structural, Morphological Properties of ZnO-NRs Films Deposited by MW-CBD and Their Photodiode Applications

Microwave-assisted chemical bath deposition (MW-CBD) was used to deposit zinc oxide nanorods (ZnO-NRs) films by using different microwave irradiation time. The films exhibit a good crystallinity having a hexagonal wurtzite phase formation. Although the dominant preferred orientation was not observed for the ZnO-5 and ZnO-10, ZnO-8 showed (002) preferred orientation. The emission scanning electron microscope (FESEM) showed almost randomly oriented hexagonal nanorods on the surface. A slight decrease in the length of the observed hexagonal nanorods due to the increase in the irradiation time was observed, changing from 550 nm to 300 nm. The p-Si/n-ZnO-NRs heterojunction photodiodes were fabricated. The current-voltage characteristics of these photodiodes were investigated under dark and different illumination intensity. An increase in the reverse current with increasing illumination intensity confirmed that the fabricated photodiodes exhibited a photoconducting behavior. In addition, the barrier height and series resistance values of the photodiodes were determined from capacitance-voltage measurements.