A note on F-planar mappings of manifolds with non-symmetric linear connection

Following the basic facts of [Formula: see text]-planar mappings introduced by Mikeš and Sinyukov and further developed by Hinterleitner and Mikeš, we consider the notions of an [Formula: see text]-planar curve and an [Formula: see text]-planar mapping, but in case of manifolds endowed with a non-symmetric linear connection and an affinor structure. Consequently, we investigate infinitesimal [Formula: see text]-planar and particularly geodesic transformations of manifolds with non-symmetric linear connection and find necessary and sufficient conditions for the existence of these transformations.

On Fε2-planar mappings with function ε of (pseudo-)Riemannian manifolds

In this paper we study special mappings between n-dimensional (pseudo-) Riemannian manifolds. In 2003 Topalov introduced PQ?-projectivity of Riemannian metrics, with constant ? ? 0,1 + n. These mappings were studied later by Matveev and Rosemann and they found that for ? = 0 they are projective. These mappings could be generalized for case, when ? will be a function on manifold. We show that PQ?- projective equivalence with ? is a function corresponds to a special case of F-planar mapping, studied by Mikes and Sinyukov (1983) with F = Q. Moreover, the tensor P is derived from the tensor Q and non-zero function ?. We assume that studied mappings will be also F2-planar (Mikes 1994). This is the reason, why we suggest to rename PQ? mapping as F?2. For these mappings we find the fundamental partial differential equations in closed linear Cauchy type form and we obtain new results for initial conditions.

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

By the use of Cl2-O2 thermal etching method, the etching rates of 4H-SiC were reached to about 1μm/h for Si and 40μm/h for C face at 950oC. Etch pits only appeared over 0.25-μm-etched depth on the 4H-SiC (0001) Si face. The shapes and density of etch pits are similar tendencies in the case of molten KOH etched surface. To study the relationship between thermally etched surface features and crystal defects, the planar mapping electron-beam-induced current (EBIC) technique was carried out. Almost dark areas in the EBIC image correspond to the etch pits. From the EBIC image, a shell-like pit formed by the Cl2-O2 etching on the (0001) Si face is a basal plane dislocation.

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edge dislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thick Ni Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBIC signals was proportional to the depth position of defect. In addition, the information of the decomposition and combination for dislocations can be obtained from the fluctuation of EBIC signal along the scanning position.