An unsaturated amido-substituted six-vertex germanium cluster and its reactions with alkenes and alkynes

Starting from the germylene {N(SiMe3)Dipp}GeCl·DMAP 1 the unsaturated germanium cluster Ge6{N(SiMe3)Dipp}42 was obtained. This cluster reacts as a masked digermyne in cycloadditions with ethylene, diphenylacetylene and 2,3-dimethyl-1,3-butadiene.

STRUCTURAL EVOLUTIONS AND PROPERTIES OF GERMANIUM CLUSTERS DURING RAPID COOLING PROCESSES

In this paper, structural evolutions of germanium cluster are studied by molecular dynamics simulations during quenching processes. Three-dimensional atomic configurations of germanium cluster are established. Our simulation results are in good agreement with the experimental ones. The structural properties of germanium are described in detail by means of several structural analysis methods. It is obtained that the 〈2, 3, 0, 0 〉 and 〈4, 0, 0, 0 〉 polyhedra play different roles in the course of liquid-to-amorphous transition. 〈4, 0, 0, 0〉 tend to be gathered together to form single crystal regions. However, 〈2, 3, 0, 0 〉 has five neighboring atoms that destroy the translational symmetry of the crystal structure, and enhances the transition barrier to crystals. Consequently, it is difficult for 〈4, 0, 0, 0 〉 to form crystal germanium at the cooling rate of 1.0 × 1010 °C/s.

Organosoluble Silicon and Germanium Nanoclusters

ABSTRACTThe organosilicon nanoclusters (OSI) and organogermanium nanocluster (OGE) which have a few nanometer sized silicon or germanium cluster and organic groups bonded to the nanocluster surfaces show solubility in common organic solvents and good film processability by solution coating method. Using the coating films as precursors, inorganic silicon and germanium films were prepared by heat treatment in vacuo and laser annealing. The structural changes of the Si and Ge skeletons of the OSI and OGE by heat treatment and laser annealing were investigated by Raman spectroscopy. The laser-annealed films showed Raman bands assigned to the polycrystalline structure. The micropatterning of polycrystalline Ge by laser direct writing method was demonstrated. The organosoluble OGE is expected to be applicable as a germanium ink which gives polycrystalline Ge film.