The study of spray impact on the heated sapphire plate

The process of the liquid spray impact on the heated surface is studied experimentally using the IR-transparent sapphire plate method. The spatiotemporal distribution of the temperature field on the sapphire substrate surface during impacting spray is received. The obtained experimental data are an important step in a study of the local characteristics of heat transfer in the areas of the contact lines during liquid spray impact on the heated surface. Further, the local heat fluxes and heat transfer coefficients will be determined by solving the problem of thermal conductivity in the sapphire substrate.

Improving the luminous efficacy and resistance to blue laser irradiation of phosphor-in-glass based solid state laser lighting through employing dual-functional sapphire plate

The luminous efficacy and durability of white LDs are obviously enhanced though employing dual-functional sapphire plate.

Evaluation of the Strength of Interface for Multi-Layered Materials in Photonic Devices

Recent electronic device packaging, for instance, CSP has a bonded structure of IC chip and polymers, and delamination occurs frequently at the interface between IC and a resin. Furthermore, thermal stresses which are caused by a temperature variation in the bonding process of CSP and heat cycles for environment temperature will influence on the strength of interface. In the present paper, the delamination test for specimens with different thicknesses of an interlayer is carried out to investigate the strength of multi-layered joints, and the critical value for the intensity of singularity at delamination of interface is determined through a numerical analysis using a boundary element analysis. In experiment, a silicon wafer is joined with a silicon-on-sapphire (SOS) plate by a resin. The SOS is composed of silicon film and sapphire plate. The joining strength in silicon, resin and SOS joints with a rectangular bonding area is investigated. The bonded specimens are prepared under different cooling rate. Load is applied to the specimen so as to delaminate at the interfaces of silicon film and sapphire. Delamination occurs at the interface between silicon film and sapphire plate in the specimen. Nominal stress for delamination is about 2.23–3.59 MPa. From a comparison of the strength of joint for rapid and slow cooling conditions, it is found that the residual stress reduces the strength of joint. In the numerical analysis, the intensity of singularity at the corner of interface for a unit load is determined. The intensity of singularity at the corner of the interface is related to the intensities of singularity in the radial direction and on the angle from the side free surface. The critical intensity of singularity for delamination of the interface is obtained by multiplying the force at delamination. Then, the critical intensity of singularity is determined as 168 MPa•mm0.18 regardless of the thickness of silicon film.

Evaluation of Strength in Joints of Silicon and Sapphire Coating Silicon

Recent electronic device packaging, for instance, Chip size package (CSP) has a bonded structure of IC chip and polymers, and delamination occurs frequently at the interface between IC and a resin. Furthermore, thermal stresses which are caused by a temperature variation in the bonding process of CSP and heat cycles for environment temperature will influence on the strength of interface. In the present paper, the delamination test for specimens with different bonding areas and geometries is carried out to investigate the strength of multi-layered joints. In particular, a silicon wafer is joined with a silicon-on-sapphire (SOS) plate by a resin. The SOS is composed of silicon film, SiO2 film and sapphire plate. The thicknesses of silicon film, SiO2 film and sapphire plate are 0.45μm, 0.2μm, 600μm, respectively. The joining strength in silicon, resin and SOS joints with triangular and rectangular bonding area is investigated. The triangular and rectangular shape bonding areas are 3mm2 and 12mm2, respectively. The bonded specimens are prepared under different cooling rate. Load is applied to the specimen so as to delaminate at the interfaces of SiO2 film and sapphire. From the delamination test, it is found that residual thermal stress and the geometry of bonding area affect the strength of interface. In the case of the triangular area specimen, delamination occurs at the interface between SiO2 film and sapphire plate in the silicon-resin-SOS specimen. The nominal stress for delamination is about 1.99MPa. In the case of rectangular bonding area specimen, delamination occurs at the interface between SiO2 film and sapphire plate in the silicon-resin-SOS specimen. Nominal stress for delamination is about 2.23MPa. From a comparison of the strength of joint for rapid and slow cooling conditions, it is found that the residual stress reduces the strength of joint.