chalcopyrite lattice
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2020 ◽  
Vol 62 (11) ◽  
pp. 2016-2023
Author(s):  
Yu. M. Basalaev ◽  
A. B. Gordienko

2020 ◽  
Vol 98 (8) ◽  
pp. 818-823
Author(s):  
V.G. Tyuterev

Electron short-wavelength phonon scattering is an effective channel for energy relaxation in crystals with a pseudo-direct optical gap. The equilibrium parameters of crystal structures and spectra of electrons and phonons in the ternary chalcopyrite compounds ZnSiP2 and ZnGeP2 are calculated self-consistently in good agreement with available experimental and theoretical calculations. The ab initio probabilities of phonon-assisted intervalley scattering of electrons in the conduction bands of the pseudo-direct-gap compounds ZnSiP2 and ZnGeP2 between the central Γ minima and the lowest lateral minima (valleys) at the T and N points have been calculated using the density functional perturbation theory. Electron–phonon scattering rates associated with intervalley phonons are calculated. Coupling constants for intervalley phonons in the chalcopyrite phosphides are close to their values in Si, Ge, and in the binary analog GaP.


2015 ◽  
Vol 58 (8) ◽  
pp. 1201-1204 ◽  
Author(s):  
Yu. M. Basalaev ◽  
A. V. Kosobutskii ◽  
E. N. Malysheva

Author(s):  
David O. Scanlon ◽  
Aron Walsh

The cuprous oxide based ternary delafossite semiconductors have been well studied in the context of p-type transparent conducting oxides. CuAlO2, CuGaO2 and CuInO2 represent a homologous series where the electronic properties can be tuned over a large range. The optical transparency of these materials has been associated with dipole forbidden transitions, which are related to the linear O—Cu—O coordination motif. The recent demonstration that these materials can be synthesized in tetrahedral structures (wurtzite analogues of the chalcopyrite lattice) opens up a new vista of applications. We investigate the underlying structure–property relationships (for Group 3 and 13 metals), from the perspective of first-principles materials modelling, towards developing earth-abundant photoactive metal oxides. All materials studied possess indirect fundamental band gaps ranging from 1 to 2 eV, which are smaller than their delafossite counterparts, although in all cases the difference between direct and indirect band gaps is less than 0.03 eV.


1985 ◽  
Vol 35 (12) ◽  
pp. 1346-1354 ◽  
Author(s):  
W. Cordts ◽  
P. Deus ◽  
V. Frei

1978 ◽  
Vol 21 (6) ◽  
pp. 722-725
Author(s):  
A. S. Poplavnoi ◽  
V. G. Tyuterev

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