Abstract
We studied theoretically electron transport through the impurity complex localized between the tunneling contact leads by means of the generalized Keldysh diagram technique. The formation of multiple well pronounced regions with negative tunneling conductivity in the I-V characteristics was revealed. The appearance of negative tunneling conductivity is caused by the presence of both strong Coulomb correlations and the asymmetry of tunneling rates, which lead to the blockade of the electron transport through the system for a certain values of applied bias. The developed theory and obtained results may be useful for the application of impurity (dopant) atoms as a basic elements in modern nanoelectronic circuits.
The subtle interaction between a tip and an atomically thin graphene membrane in tunneling contact can be used for nonindenting force spectroscopy. This was applied to a freestanding single layer of graphene and permitted the detection of Young's modulus.
Correlated impurity complex in the asymmetric tunneling contact: an ideal system to observe negative tunneling conductivity