complex impedance plane plot
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Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1007 ◽  
Author(s):  
Hamid Farahani ◽  
Rahman Wagiran ◽  
Olena Yurchenko ◽  
Gerald A. Urban

The influence of Mg2+ doping (3 mol %) on structural and humidity sensing properties of (Ba0.5,Sr0.5)TiO3 (BST) perovskite nanocomposite were studied in details. Microstructural properties revealed the particle size, surface area, and average pore volume diminished for doped sample. For the MgO doped BST sensor, the film resistance and total impedance are changed more than four orders of magnitude in the 20–95% RH range, while BST sensor shows three orders change. The 3 mol % MgO doped sample with maximum hysteresis of 6.1 RH% and response/recovery time of about 30/80 s exhibits faster characteristics compare to pure BST sample with 6.8 RH% hysteresis and response/recovery of 41 s and 98 s, respectively. Transduction mechanism was found based on the proton transfer and further confirmed by a Bode plot and Nyquist complex impedance plane plot.


2018 ◽  
Vol 2 (1) ◽  

The nanorods of cadmium selenide (CdSe) have been synthesized by soft chemical route using mercapto ethanol as a capping agent. The sample forms a rod like shape, confirmed by transmission electron microscope (TEM) measurement. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample at a various temperature region with varying frequency range. Grain and grain boundary effects both are present in the complex impedance plane plot and is analyzed by an electrical equivalent circuit consisting of a resistance and a constantphase element. Dielectric relaxation mechanism shows peak positions in the imaginary parts of the spectra and that is analyzed by Cole–Cole model. The temperature-dependent relaxation times obeys Arrhenius law having activation energy of 0.391 eV, which indicates that polaron hopping is responsible for conduction or dielectric relaxation in this material. The presence of two plateaus in the frequency-dependent conductivity spectra follows double-power law


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